Motorola MRF949T1 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF Line

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Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity.

• Low Noise Figure, NF

• High Current Gain–Bandwidth Product, ft = 9 GHz @ 15 mA

• Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA

• Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA

• Fully Ion–Implanted with Gold Metallization and Nitride Passivation

• Available in Tape and Reel Packaging Options:

T1 Suffix = 3,000 Units per Reel

MAXIMUM RATINGS

Collector–Emitter Voltage V Collector–Base Voltage V Emitter–Base Voltage V Power Dissipation (1) TC = 75°C

Derate linearly above TC = 75°C @ Collector Current — Continuous (2) I Maximum Junction Temperature T Storage Temperature T Thermal Resistance, Junction to Case R

DEVICE MARKINGS

MRF949T1 = JL

(1) T o calculate the junction temperature use TJ = (PD x R

body.

(2) IC — Continuous (MTBF > 10 years).

= 1.4 dB (Typ) @ 1 GHz @ 5 mA

min

Rating Symbol Value Unit

θJC

) + TC. The case temperature is measured on collector lead adjacent to the package

CEO CBO EBO

P

Dmax

Jmax

C

stg

θJC



I

= 50 mA

Cmax

LOW NOISE

TRANSISTORS

CASE 463–01, STYLE 1

(SC–90)

10 Vdc 20 Vdc

1.5 Vdc

0.144

1.92 50 mA

150 °C

–55 to +150 °C

520 °C/W

Watts

mW/°C

 Motorola, Inc. 1998

MRF949T1MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

A

OFF CHARACTERISTICS (3)

Collector–Emitter Breakdown V oltage

(IC = 0.1 mA, IB = 0)

Collector–Base Breakdown Voltage

(IC = 0.1 mA, IE = 0)

Emitter Cutoff Current

(VEB = 1 V, IC = 0)

Collector Cutoff Current

(VCB = 10 V, IE = 0)

V

(BR)CEO

V

(BR)CBO

I

EBO

I

CBO

ON CHARACTERISTICS (3)

DC Current Gain (VCE = 6 V, IC = 5 mA)

h

FE 50 — — —

DYNAMIC CHARACTERISTICS

Collector–Base Capacitance

(VCB = 1 V, IE = 0, f = 1 MHz) (VCB = 5 V, IE = 0, f = 1 MHz)

Current Gain — Bandwidth Product

(VCE = 6 V, IC = 30 mA, f = 1 GHz)

C

cb

f

T

PERFORMANCE CHARACTERISTICS

Conditions Symbol Min Typ Max Unit

Insertion Gain

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz)

Maximum Unilateral Gain (4)

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz)

Maximum Stable Gain and/or Maximum Available Gain (5)

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 15 mA, f = 1 GHz)

Noise Figure — Minimum

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz)

Noise Resistance

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz)

Associated Gain at Minimum NF

(VCE = 1 V, IC = 1 mA, f = 1 GHz) (VCE = 6 V, IC = 5 mA, f = 1 GHz)

Output Power at 1 dB Gain Compression (6)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

Output Third Order Intercept (6)

(VCE = 6 V, IC = 15 mA, f = 1 GHz)

(3) Pulse width ≤ 300 µs, duty cycle ≤ 2% pulsed. (4) Maximum unilateral gain is G

(5) Maximum available gain and maximum stable gain are defined by the K factor as follows: (6) Zin = 50 Ω and Z

matched for optimum IP3.

out

Umax

=

(1

–

|S11|2)(1–|S

2

|S

|

21

|2)

22

|S21|

G

Umax

MSG MAG

NF

R

G

P

OIP

min

NF

1dB

N

3

2

MAG =

10 12 — Vdc

20 23 — Vdc

— — 0.1 µA

— —

— 9 — GHz

— —

— +13 — dBm

— +28 — dBm

|S

21 |S12| |S

21 |S12|

0.4

0.3

7

15

13 17

12 18

1.6

1.4

24 19

10 15

|

(K

|

, if K < 1MSG =

2

"

K

–

1Ǹ)

— —

, if K > 1

pF

dB

Ω

dB

MRF949T1 2

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

1.4

1.2

1.0

0.8

0.6

0.4

C, CAPACITANCE (pF)

0.2

0

024 8106

C

ob

C

cb

VCB, REVERSE VOLTAGE (V)

Figure 1. Capacitance versus V oltage

180

160

140

120

, DC CURRENT GAIN

FE

h

100

80

1

IC, COLLECTOR CURRENT (mA)

10

f = 1 MHz

VCE = 1 V

100

1.2

1.1

1.0

0.9

0.8

0.7

, INPUT CAP ACITANCE

IB

0.6

C

0.5

0.4 0 0.25 0.5 0.75 1.0

C

ib

VEB, EMITTER–BASE VOLTAGE (V)

Figure 2. Input Capacitance versus V oltage

10

VCE = 6 V

9

f = 1 GHz

8 7 6 5 4 3

, GAIN BANDWIDTH PRODUCT (GHz)

2

T

f

1

0.1 1 10010 IC, COLLECTOR CURRENT (mA)

f = 1 MHz

1.25

1.5

RF

INPUT

P

in

Figure 3. DC Current Gain versus

Collector Current

V

BE

BIAS NETWORK

*SLUG TUNER

Figure 5. Functional Circuit Schematic

DUT

Figure 4. Gain–Bandwidth Product versus

Collector Current

V

CE

RF OUTPUT

*SLUG TUNER

BIAS NETWORK

*MICROLAB/FXR SF–11N < 1 GHz SF–31N > 1 GHz

P

MRF949T1MOTOROLA RF DEVICE DATA

out

3

TYPICAL CHARACTERISTICS

35

30

25

20

15

10

MAXIMUM AV AILABLE GAIN (dB)

5

MSG, MAXIMUM STABLE GAIN; MAG,

0

0.1 1 10

MSG

MAG

f, FREQUENCY (GHz)

Figure 6. Maximum Stable/Available Gain

versus Frequency

40

,

35

Umax

30 25 20 15 10

5

, FORWARD INSER TION GAIN; G

2

MAXIMUM UNILA TERAL GAIN (dB)



0

21

S



–5

0.1 1

G

Umax



S21

2

f, FREQUENCY (GHz)

VCE = 1 V IC = 1 mA

35

30

25

20

15

10

MAXIMUM AV AILABLE GAIN (dB)

MSG, MAXIMUM STABLE GAIN; MAG,

45

,

40

Umax

35 30 25 20 15

10

, FORWARD INSER TION GAIN; G

2

MAXIMUM UNILA TERAL GAIN (dB)



21

S



10

VCE = 6 V

MSG

5

0

0.1 1 f, FREQUENCY (GHz)

MAG

IC = 5 mA

MSG

Figure 7. Maximum Stable/Available Gain

versus Frequency

VCE = 6 V IC = 5 mA

G

Umax

2



S21

5 0

0.1 1 10 f, FREQUENCY (GHz)

10

Figure 8. Maximum Unilateral Gain and

Forward Insertion Gain versus Frequency

16

,

Umax

, FORWARD INSER TION GAIN; G

2



21

S



VCE = 1 V

14

f = 1 GHz

12

10

8

6

MAXIMUM UNILA TERAL GAIN (dB)

4

0.1 1

G

Umax

2



S21

10

IC, COLLECTOR CURRENT (mA)

Figure 10. Maximum Unilateral Gain and

Forward Insertion Gain versus Collector Current

MRF949T1 4

100

Figure 9. Maximum Unilateral Gain and

Forward Insertion Gain versus Frequency

20

,

VCE = 6 V

18

Umax

, FORWARD INSER TION GAIN; G

2



21

S



f = 1 GHz

16 14 12 10

8

MAXIMUM UNILA TERAL GAIN (dB)

6 4

0.1 1 10010

G

Umax

2



S21

IC, COLLECTOR CURRENT (mA)

Figure 11. Maximum Unilateral Gain and

Forward Insertion Gain versus Collector Current

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

20

VCE = 1 V f = 1 GHz

18

16

MSG

14

12

MAXIMUM AV AILABLE GAIN (dB)

10

8

0.1 1 100 IC, COLLECTOR CURRENT (mA)

MAG

10 10

Figure 12. Maximum Stable/Available Gain

versus Collector Current

20 18 16 14 12 10

8 6

NF

4

G , ASSOCIATED GAIN (dB) MSG, MAXIMUM STABLE GAIN; MAG,

2 0

0.1 1

G

NF

min

f, FREQUENCY (GHz)

VCE = 1 V IC = 1 mA

20

VCE = 6 V f = 1 GHz

18

16

14

12

MAXIMUM AV AILABLE GAIN (dB)

MSG, MAXIMUM STABLE GAIN; MAG,

10

0.1 1

Figure 13. Maximum Stable/Available Gain

10

5

4

3

2

1

0

26

22

18

14

NF

10

G , ASSOCIATED GAIN (dB)

min

NF , MINIMUM NOISE FIGURE (dB)

6

0.1 1 10

MSG

IC, COLLECTOR CURRENT (mA)

versus Collector Current

G

NF

min

f, FREQUENCY (GHz)

MAG

VCE = 6 V IC = 5 mA

100

5

4

3

2

1

min

NF , MINIMUM NOISE FIGURE (dB)

0

Figure 14. Minimum Noise Figure and

Associated Gain versus Frequency

16

VCE = 1 V f = 1 GHz

14

12

10

NF

G , ASSOCIATED GAIN (dB)

8

6

0.1 1 IC, COLLECTOR CURRENT (mA)

Figure 16. Minimum Noise Figure and

Associated Gain versus Collector Current

10

NF

G

min

NF

Figure 15. Minimum Noise Figure and

Associated Gain versus Frequency

100

5

4

3

2

1

0

18

VCE = 6 V f = 1 GHz

16

14

12

10

NF

G , ASSOCIATED GAIN (dB)

min

8

NF , MINIMUM NOISE FIGURE (dB)

6

0.1 1 10010

Figure 17. Minimum Noise Figure and

Associated Gain versus Collector Current

G

NF

min

IC, COLLECTOR CURRENT (mA)

NF

6

5

4

3

2

min

1

NF , MINIMUM NOISE FIGURE (dB)

0

MRF949T1MOTOROLA RF DEVICE DATA

5