Motorola MRF927T3, MRF927T1 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MRF927T1/D
The RF Small Signal Line
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Designed for use in low voltage, low current applications at frequencies to
2.0 GHz. Specifically aimed at portable communication devices such as
pagers and hand–held phones.
• High Gain (G
• Small, Surface–Mount Package (SC–70)
• High Current Gain–Bandwidth Product at Low Current,
Low Voltage (fτ = 8.0 GHz Typ @ 3.0 V, 5.0 mA)
• Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.
15 dB Typ @ 1.0 GHz) @ 1.0 mA
Umax
IC = 10 mA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Storage Temperature Range T
Operating Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction–to–Case R
DEVICE MARKING
MRF927T1 = F
CEO
CBO
EBO
C
P
D
stg
J
θJC
10 Vdc
20 Vdc
2.5 Vdc
10 mAdc
100
1.0
– 55 to +150 °C
150 °C
1000 °C/W
mW
mW/°C
REV 1
Motorola, Inc. 1997
MRF927T1 MRF927T3MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0 mA)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
Emitter Cutoff Current
(VEB = 1.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 1.0 Vdc, IC = 0.5 mA)
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
Current–Gain Bandwidth Product
(VCE = 3.0 Vdc, IE = 5.0 mA, f = 1.0 GHz)
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz) Figure 3
Associated Gain at Minimum Noise Figure
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz) Figure 3
Maximum Unilateral Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Insertion Gain
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
Noise Resistance
(VCE = 1.0 Vdc, IC = 1.0 mA, f = 1000 MHz)
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
h
FE
C
cb
f
τ
NF
min
G
NF
G
Umax
2
|S
| — 8.0 — dB
21
R
N
10 — — Vdc
20 — — Vdc
1.5 — — Vdc
— — 0.1 µA
50 — 200 —
— 0.33 — pF
— 8.0 — GHz
— 1.7 — dB
— 9.8 — dB
— 15 — dB
— 62 — Ohms
MRF927T1 MRF927T3
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
0.5
0.45
0.4
0.35
0.3
0.25
C, CAPACITANCE (pF)
0.2
0.15
0.1
VEB, EMITTER–BASE VOLTAGE (VOLTS)
Figure 1. Cib Input Capacitance versus V oltage
V
BE
0.4
0.35
0.3
C, CAPACITANCE (pF)
0.25
1.61.31.00.70.40
0.2
8.06.04.02.01.0
VCB, REVERSE VOLTAGE (VOLTS)
Figure 2. Ccb, Collector–Base
Capacitance versus V oltage
V
CE
RF INPUT
NETWORK
DUT
**SLUG TUNER*BIAS
Figure 3. Functional Circuit Schematic
**SLUG TUNER
*BIAS
NETWORK
RF OUTPUT
*HP11590B
**MICROLAB/FXR
**SF – 11N < 1 GHz
**SF – 31IN
≥
1 GHz
MRF927T1 MRF927T3MOTOROLA RF DEVICE DATA
3
TYPICAL CHARACTERISTICS
1000
100
, DC CURRENT GAIN
10
FE
h
T
f , GAIN BANDWIDTH PRODUCT (GHz)
1000
VCE = 1 V
100
, DC CURRENT GAIN
10
FE
h
1
IC, COLLECTOR CURRENT (mA)
1001010.10.010.001
Figure 4. DC Current Gain versus
Collector Current
8
7
6
5
4
3
2
1
0
IC, COLLECTOR CURRENT (mA)
VCE = 1 V
4 103210.5
53210.50.25
100.1 0.1
T
f , GAIN BANDWIDTH PRODUCT (GHz)
1
IC, COLLECTOR CURRENT (mA)
Figure 5. DC Current Gain versus
Collector Current
9
7
6
5
4
3
2
1
0
IC, COLLECTOR CURRENT (mA)
VCE = 3 V
1010.10.010.001
VCE = 3 V
485
Figure 6. Gain Bandwidth Product versus
40
35
30
25
20
15
, INSERTION GAIN (dB)
2
21
10
S
, MAXIMUM UNILATERAL GAIN (dB)
5
Umax
G
0
0.30.1
Figure 8. Forward Insertion Gain and Maximum
Unilateral Gain versus Frequency
MRF927T1 MRF927T3
4
Collector Current
VCE = 1 V
IC = 1 mA
G
Umax
2
|S21|
0.5 0.7 2 3 4 5
f, FREQUENCY (GHz)
1 10 0.3 0.5 0.7 1 10
Figure 7. Gain Bandwidth Product versus
40
35
30
25
20
15
, INSERTION GAIN (dB)
2
21
10
S
, MAXIMUM UNILATERAL GAIN (dB)
5
Umax
G
0
0.1
Figure 9. Forward Insertion Gain and Maximum
Collector Current
VCE = 3 V
IC = 3 mA
G
Umax
2
|S21|
2345
f, FREQUENCY (GHz)
Unilateral Gain versus Frequency
MOTOROLA RF DEVICE DATA
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