Motorola MRF917T1 Datasheet
1
MRF917T1MOTOROLA RF DEVICE DATA
The RF Small Signal Line
Designed f or low noise, wide dynamic range f ront end amplifiers, at
frequencies to 1.5 GHz. Specifically aimed at portable communication devices
such as pagers and hand–held phones.
• Small, Surface–Mount Package (SC–70)
• High Current Gain–Bandwidth Product (fτ = 6.0 GHz Typ @ 6.0 V, 20 mA)
• Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
• Available in Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
12 Vdc
Collector–Base Voltage V
CBO
20 Vdc
Emitter–Base Voltage V
EBO
2.0 Vdc
Collector Current — Continuous I
C
60 mAdc
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
P
D
222
3.0
mW
mW/°C
Storage Temperature Range T
stg
– 55 to +150 °C
Operating Temperature Range T
J
150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction–to–Case (1) R
θJC
338 °C/W
DEVICE MARKING
MRF917T1 = K
(1) Case temperature measured on the collector lead immediately adjacent to body of package.
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SEMICONDUCTOR TECHNICAL DATA
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419–02, STYLE 3
(SC–70/SOT–323)
Motorola, Inc. 1996
MRF917T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0 mA)
V
(BR)CEO
12 — — Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V
(BR)CBO
20 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V
(BR)EBO
2.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 50 nA
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 Vdc, IC = 30 mA)
h
FE
40 — 200 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 1.0 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 0.54 — pF
Current–Gain Bandwidth Product
(VCE = 6.0 Vdc, IC = 20 mA, f = 1.0 GHz)
f
τ
— 6.0 — GHz
PERFORMANCE CHARACTERISTICS
Noise Figure — Minimum 500 MHz
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1 1.0 GHz
NF
min
—
—
1.7
2.3
—
—
dB
Associated Gain at Minimum Noise Figure 500 MHz
(VCE = 6.0 Vdc, IC = 5.0 mA) Figure 1 1.0 GHz
G
NF
—
—
15.4
10
—
—
dB
Maximum Unilateral Gain
(VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz)
G
Umax
— 12 — dB
Insertion Gain
(VCE = 6.0 Vdc, IC = 20 mA, f = 1000 MHz)
|S
21
2
|
— 11.2 — dB
Noise Resistance
(VCE = 6.0 Vdc, IC = 5.0 mA, f = 1000 MHz)
R
N
— 15 — Ohms
Figure 1. Functional Circuit Schematic
V
BE
V
CE
DUT
RF INPUT
RF OUTPUT
**SLUG TUNER
**SLUG TUNER*BIAS
NETWORK
*BIAS
NETWORK
*HP11590B
**MICROLAB/FXR
**SF – 11N < 1 GHz
**SF – 31IN
≥
1 GHz
3
MRF917T1MOTOROLA RF DEVICE DATA
VCE = 6 V
IC = 5 mA
NF
min
G
NF
VCE = 6 V
IC = 20 mA
G
Umax
|S21|
2
VCE = 6 V
IC = 5 mA
G
Umax
|S21|
2
C
ob
C
cb
VCE = 6 V
VCE = 3 V
35
30
25
20
15
10
5
0
TYPICAL CHARACTERISTICS
Figure 2. fτ, Current–Gain Bandwidth Product
versus Collector Current
IC, COLLECTOR CURRENT (mA)
4020151051
7
0
Figure 3. Output Capacitance versus
Collector–Base Voltage
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
1010
2
1.5
0.5
0
Figure 4. Maximum Power Dissipation versus
Collector Lead Temperature (TC)
TC, CASE TEMPERATURE (°C)
150100755025
0
Figure 5. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
f, FREQUENCY (GHz)
f
125 101
Figure 6. Forward Insertion Gain and
Maximum Unilateral Gain versus Frequency
f, FREQUENCY (GHz)
0.1
Figure 7. Minimum Noise Figure and
Associated Gain versus Frequency
f, FREQUENCY (GHz)
0.2
4
0
3.5
3
2.5
2
1.5
1
0.5
2000 0.1
1 10 0.3 0.5 1 32
6
5
4
3
2
1
30
C
cb
, C
ob
(pF)
1
2 3 4 5 6 7 8 9
300
250
200
150
100
50
P
D(max)
, MAXIMUM POWER DISSIPATION (mW)
G
Umax S
21
(dB)
2,
35
30
25
20
15
10
5
0
–5
G
Umax S
21
(dB)
2,
NF
min
, MINIMUM NOISE FIGURE (dB)
G
NF
, ASSOCIATED GAIN (dB)
20
18
16
14
12
10
8
6
4
τ
, GAIN BANDWIDTH PRODUCT (GHz)
0.2 0.5 2 3 50.3
0.2 0.3 0.5 2 3 5 0.1
MRF917T1
4
MOTOROLA RF DEVICE DATA
VCE = 6 V
VCE = 3 V
VCE = 3 V
IC = 3 mA
NF
min
G
NF
Figure 8. Minimum Noise Figure and
Associated Gain versus Frequency
f, FREQUENCY (GHz)
0.1
4
0
3.5
3
2.5
2
1.5
1
0.5
0.2 0.3 0.5 1 32
NF
min
, MINIMUM NOISE FIGURE (dB)
G
NF
, ASSOCIATED GAIN (dB)
20
18
16
14
12
10
8
6
4
TYPICAL CHARACTERISTICS
5
1.5
4.5
4
3.5
3
2.5
2
NF
min
, MINIMUM NOISE FIGURE (dB)
IC, COLLECTOR CURRENT (mA)
1 3 5 10 3020
Figure 9. Minimum Noise Figure and
Associated Gain versus Collector Current
G
NF
, ASSOCIATED GAIN (dB)
14
12
10
8
6
4
2
0
5
1.5
4.5
4
3.5
3
2.5
2
NF
min
, MINIMUM NOISE FIGURE (dB)
IC, COLLECTOR CURRENT (mA)
1 3 5 10 3020
Figure 10. Minimum Noise Figure and
Associated Gain versus Collector Current
G
NF
, ASSOCIATED GAIN (dB)
14
12
10
8
6
4
2
0
2
2
NF
min
G
NF
NF
min
G
NF
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