Motorola MRF899 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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  

Designed for 26 Volt UHF large–signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–960 MHz.

• Specified 26 Volt, 900 MHz Characteristics

Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion –28 dBc @ 150 Watts (PEP)

• Characterized with Series Equivalent Large–Signal Parameters from 800

to 960 MHz

• Silicon Nitride Passivated

• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, and Rated Output Power

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

Order this document

by MRF899/D



150 W, 900 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 375A–01, STYLE 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

CEO
CES
EBO

C

P

D

stg

28 Vdc
60 Vdc

4.0 Vdc
25 Adc

230

1.33

–65 to +150 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

θJC

0.75 °C/W

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 100 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) I

(BR)CEO
(BR)CES
(BR)EBO

CES

28 37 — Vdc
60 85 — Vdc

4.0 4.9 — Vdc
— — 10 mAdc

ON CHARACTERISTICS

DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) h

FE

30 75 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) C

(1) For information only . This part is collector matched. (continued)

ob

— 75 — pF

REV 7

 Motorola, Inc. 1997

MRF899MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

FUNCTIONAL CHARACTERISTICS

Common–Emitter Amplifier Power Gain

VCC = 26 Vdc, P
f2 = 900.1 MHz

Collector Efficiency

VCC = 26 Vdc, P
f2 = 900.1 MHz

3rd Order Intermodulation Distortion

VCC = 26 Vdc, P
f2 = 900.1 MHz

Output Mismatch Stress

VCC = 26 Vdc, P
f2 = 900.1 MHz, VSWR = 5:1 (all phase angles)

= 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

out

= 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

out

= 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

out

= 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz,

out

= 25°C unless otherwise noted.)

C

G

pe

η 30 40 — %

IMD — –32 –28 dBc

ψ No Degradation in Output Power

8.0 9.0 — dB

Before and After Test

INPUT

L1

COAX 1

BALUN 1

V

BB

C26

V

B

R1a

C4

C1

C2

TL2

V

R1b

C3

B

R2

R3

L4

B1

L2

TL3

C9

TL4

L3

B2

L5

C6 C8 C11

Q1

L6R3

TL5

D.U.T.

++

C27
+

TL6

R4

C15C13 C18

L8 C21 C23

C20

L7

C19C16

L9

V

CC

V

BB

TL1

+

V

CC

C17C14C12C10C7C5

C22

TL7

C24

C25

TL8

+

BALUN 2

OUTPUT

COAX 2

B1, B2 — Ferrite Bead, Ferroxcube #56–590–65–3B
C1, C2, C24, C25 — 43 pF, B Case, ATC Chip Capacitor
C3, C4, C20, C21 — 100 pF, B Case, ATC Chip Capacitor
C5, C6, C12, C13 — 1000 pF, B Case, ATC Chip Capacitor
C7, C8, C14, C15 — 1800 pF, AVX Chip Capacitor
C9 — 9.1 pF, A Case, ATC Chip Capacitor
C10, C11, C17, C18, C22, C23 — 10 µF, Electrolytic Capacitor

Panasonic
C16 — 3.9 pF, B Case, ATC Chip Capacitor
C19 — 0.8 pF, B Case, ATC Chip Capacitor
C26 — 200 µF, Electrolytic Capacitor Mallory Sprague
C27 — 500 µF Electrolytic Capacitor

Figure 1. 900 MHz Power Gain Test Circuit

MRF899
2

L1 — 5 Turns 24 AWG IDIA 0.059″ Choke, 19.8 nH
L2, L3, L7, L9 — 4 Turns 20 AWG IDIA 0.163″ Choke
L4, L5, L6, L8 — 12 Turns 22 AWG IDIA 0.140″ Choke
N1, N2 — Type N Flange Mount, Omni Spectra
Q1 — Bias Transistor BD136 PNP
R2, R3, R4, R5 — 4.0 x 39 Ohm 1/8 W Chips in Parallel
R1a, R1b — 56 Ohm 1.0 W
TL1–TL8 — See Photomaster
Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm 0.088″ o.d.

Balun1, Balun2, Coax 1, Coax 2 — Semi–rigid Coax, Micro Coax

Board — 1/32″ Glass Teflon, εr = 2.55″ Arlon (GX–0300–55–22)

MOTOROLA RF DEVICE DATA