Motorola MRF898 Datasheet

39

MRF898MOTOROLA RF DEVICE DATA

The RF Line

 
  

. . . designed for 24 Volt UHF large–signal, common base amplifier applications
in i ndustrial and c ommercial FM e quipment o perating i n the r ange o f
850–960 MHz.

• Motorola Advanced Amplifier Concept Package

• Specified 24 Volt, 900 MHz Characteristics

Output Power = 60 Watts
Power Gain = 7.0 dB Min
Efficiency = 60% Min

• Double Input/Output Matched for Wideband Performance and Simplified
External Matching

• Series Equivalent Large–Signal Characterization

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Silicon Nitride Passivated

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

30 Vdc

Collector–Base Voltage V

CBO

55 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

10 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

175

1.0

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.0 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

V

(BR)CEO

30 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

V

(BR)CES

55 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 30 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 10 mAdc

(continued)

Order this document

by MRF898/D

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SEMICONDUCTOR TECHNICAL DATA



60 W, 850–960 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 333A–02, STYLE 1

 Motorola, Inc. 1994

REV 6

MRF898
40

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 Adc, VCE = 5.0 Vdc)

h

FE

20 50 150 —

DYNAMIC CHARACTERISTICS

Output Capacitance (1)

(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 60 — pF

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(VCC = 24 Vdc, P

out

= 60 W, f = 900 MHz)

G

pb

7.0 7.9 — dB

Collector Efficiency

(VCC = 24 Vdc, P

out

= 60 W, f = 900 MHz)

η 60 65 — %

Output Mismatch Stress

(VCC = 24 Vdc, P

out

= 60 W, f = 900 MHz,

VSWR = 5:1, all phase angles)

ψ

No Degradation in Output Power

NOTE:

1. Value of “Cob” is that of die only. It is not measurable in MRF898 because of internal matching network.

Figure 1. 850–960 MHz Broadband Test Circuit

B1, B2, B3 — Bead, Ferroxcube 56–390–65/3B
C1, C2, C12 — 39 pF, 100 Mil Chip Capacitor
C3, C11 — 91 pF, Mini Underwood or Equivalent
C4, C7, C9 — 10 µF, 35 V Electrolytic
C5 — 4000 pF, 1.0 kV Ceramic
C6, C10 — 1000 pF, 350 V Unelco or Equivalent
C8 — 47 pF, 100 Mil Chip Capacitor
L1, L4 — 4 Turns #18 AWG Choke
L2 — 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor
L3 — 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor

TL1, TL6 — 50 Ohm Microstrip
TL2 — 400 x 950 Mils
TL3, TL4 — 140 x 200 Mils
TL5 — 320 x 690 Mils
TL7 — 260 x 230 Mils

Board — 3M Epsilam–10, 50 Mil
Bias Boards — 1/32″ G10 or Equivalent

SHORTING

PLUG

50

OHMS

C1

C10

+ V

CC

GND

DUT

TL1

50

OHMS

B3 B1

V

RE

L3

TL2 TL3

TL7

TL4 TL5 TL6

C11

GND

L4

C2

C3

+

B2 C4

C5 C6 C7 C8

+

L2

L1

C12

C9