Motorola MRF897R Datasheet

1

MRF897RMOTOROLA RF DEVICE DATA

The RF Line

 
  

Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800–970 MHz.

• Specified 24 Volt, 900 MHz Characteristics

Output Power = 30 Watts
Minimum Gain = 10.5 dB @ 900 MHz, class–AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)

• Characterized with Series Equivalent Large–Signal Parameters from 800

to 960 MHz

• Silicon Nitride Passivated

• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, and Rated Output Power

• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–

Migration

• Circuit Board Photomaster Available by Ordering Document

MRF897RPHT/D from Motorola Literature Distribution.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

30 Vdc

Collector–Emitter Voltage V

CES

60 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector–Current — Continuous I

C

4.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

105

0.60

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.67 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V

(BR)CEO

30 33 — Vdc

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V

(BR)CES

60 80 — Vdc

Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V

(BR)EBO

4.0 4.7 — Vdc

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C) I

CES

— — 10.0 mAdc

ON CHARACTERISTICS

DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) h

FE

30 80 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) C

ob

14 21 28 pF

(continued)

Order this document

by MRF897R/D



SEMICONDUCTOR TECHNICAL DATA



30 W, 900 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 395B–01, STYLE 1

 Motorola, Inc. 1995

MRF897R
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

FUNCTIONAL CHARACTERISTICS

Common–Emitter Amplifier Power Gain

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

G

pe

10.5 12.0 — dB

Collector Efficiency

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

η 30 38 — %

Intermodulation Distortion

(VCC = 24 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz)

IMD — –37 –30 dBc

Output Mismatch Stress

(VCC = 26 Vdc, P

out

= 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))

ψ No Degradation in Output Power

COAX 1

BALUN 1

INPUT

TL2

TL1

C1

C2

C3

TL4

TL3

TL5

TL6

C10

DUT

R3

B1

TL7

TL8

C15

C20

C23

C24

C4

C25

L3

C6

+

V

B

R1

V

BB

Q1

C8

TL11

OUTPUT

COAX 2

BALUN 2

TL9

TL10

B3

C16

L7

C21

C18

V

CC

R5

L5

C11

+

C13

+

C9

L1

L2

B2

L4

R4

C5C26

C7

+

V

B

R2

V

BB

L8

C17

B4

C22 C19

L6

R6

C12+C14

+

V

CC

B1, B2, B3, B4 — Short Ferrite Bead, Fair Rite #2743019447
C1 — 0.8–8.0 pF Var Capacitor, Johansen Gigatrim
C2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip Capacitor
C4, C5, C21, C22 — 1000 pF, 100 mil, ATC Chip Capacitor
C6, C7, C11, C12 — 10 µF, Electrolytic Capacitor, Panasonic
C8, C9, C16, C17 — 100 pF, 100 mil, ATC Chip Capacitor
C10 — 9.1 pF, 50 mil, ATC Chip Capacitor
C13 — 250 µF Electrolytic Capacitor, Mallory
C14, C18, C19, C25 — 0.1 µF, Chip Capacitor, Kemet
C15 — 1.1 pF, 50 mil, ATC Chip Capacitor
C20 — 6.8 pF, 100 mil, ATC Chip Capacitor
L1, L2, L3, L4, L5, L6, L7, L8 — 5 Turns 20 AWG,

IDIA 0.126″ Choke, Taylor Spring 46 nH

Figure 1. 840–900 MHz Test Circuit Schematic

N1, N2 — Type N Flange Mount, Omni Spectra 3052–1648–10
Q1 — Bias Transistor BD136 PNP
R1, R12 — 27 Ohm, 2.0 W
R3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips Resistors in

R3, R4, R5, R6 — Parallel, Rohm 390–J

SB1 — 0.15″ x 0.3″ x 0.03″ Cu
TL1–TL11 — Microstrip Line, See Photomaster
Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm, 0.086″ o.d.

Balun1, Balun2, Coax 1, Coax 2 — semi–rigid coax, Micro Coax
Balun1, Balun2, Coax 1, Coax 2 — UT–85–M17

Circuit Board — 1/32″ Glass Teflon, Arlon GX–0300–55–22,

Circuit Board — εr = 2.55