Motorola MRF894 Datasheet

21

MRF894MOTOROLA RF DEVICE DATA

The RF Line

 
  

. . . designed for 24 volt UHF large–signal, common–base amplifier applications
in i ndustrial and c ommercial FM e quipment o perating i n the r ange o f
804–960 MHz.

• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min

• Series Equivalent Large–Signal Characterization

• Capable of 30:1 VSWR Load Mismatch at Rated Output Power and Supply

Voltage

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Silicon Nitride Passivated

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

30 Vdc

Collector–Base Voltage V

CBO

50 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

7.0 Adc

Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C

P

D

115

0.66

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

θJC

1.5 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V

(BR)CEO

30 — — Vdc

Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V

(BR)CES

50 — — Vdc

Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current (VCB = 30 Vdc, IE = 0) I

CBO

— — 10 mAdc

NOTES: (continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF894/D



SEMICONDUCTOR TECHNICAL DATA



30 W, 900 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 319–07, STYLE 1

 Motorola, Inc. 1994

REV 6

MRF894
22

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 2.0 Adc, VCE = 5.0 Vdc)

h

FE

10 — 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 45 — pF

FUNCTIONAL TESTS

Common–Base Amplifier Power Gain

(P

out

= 30 W, VCC = 24 Vdc, f = 900 MHz)

G

PE

7.0 8.5 — dB

Collector Efficiency

(P

out

= 30 W, VCC = 24 Vdc, f = 900 MHz)

η 55 60 — %

Figure 1. 850–900 MHz Broadband Circuit Schematic

B — Ferrite Bead, Ferroxcube 56–590–65–3B
C1, C13 — 5.0 µF, 50 Vdc
C2, C12 — 1000 pF Unelco
C3, C11 — 47 pF, 100 Mil Chip Capacitor
C4, C9 — 91 pF, Mini–Underwood
C5, C6 — 12 pF, Mini–Underwood
C7 — 18 pF, Mini–Underwood
C8 — 24 pF, Mini–Underwood
C10 — 0.8–8.0 pF Johanson Gigatrim

L1, L4 — 11 Turns #20 Enameled Over 10 Ω Carbon Resistor
L2, L3 — 4 Turns #20 Enameled, .15″ ID
TL1, TL4 — Micro Strip Line, 50 Ω
TL2 — Micro Strip, Zo = 30 Ω, λ/4 @ 875 MHz
TL3 — Micro Strip, Zo = 22 Ω, λ/4 @ 875 MHz
Board — 0.032″ Glass Teflon

Board — 2 oz. Cu CLAD, εr = 2.55

V

RE

PORT

+

+24 Vdc

C1

C10

DUT

TL2

+

B

C2

C3

C5

C6

TL3

L3

C13

C9

C4

L2

TL1

L1 L4

C12

C7

C8

C11

TL4

B

SOCKET SOCKET