Motorola MRF891S, MRF891 Datasheet

2–11
MRF891 MRF891SMOTOROLA RF DEVICE DATA
The RF Line
    
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica­tions in industrial and commercial FM e quipment operating in the range of 800–960 MHz.
Series Equivalent Large–Signal Characterization
Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Silicon Nitride Passivated
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Emitter Voltage V
CES
55 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
0.6 Adc
Total Device Dissipation @ TA = 50°C (1)
Derate above 50°C
P
D
18
0.143
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
7.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V
(BR)CEO
30 Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V
(BR)CES
55 Vdc
Emitter–Base Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
V
(BR)EBO
4.0 Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
I
CES
1.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
h
FE
30 150
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF891/D

SEMICONDUCTOR TECHNICAL DATA

5.0 W, 900 MHz RF POWER
TRANSISTORS
NPN SILICON
CASE 319–07, STYLE 2
MRF891
CASE 319A–02, STYLE 2
MRF891S
Motorola, Inc. 1994
REV 6
MRF891 MRF891S 2–12
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
C
ob
6.5 8.0 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain (Broadband)
(VCC = 24 Vdc, P
out
= 5.0 W, f = 900 MHz)
G
pe
9.0 10 dB
Collector Efficiency
(VCC = 24 Vdc, P
out
= 5.0 W, f = 900 MHz)
η 50 57 %
Load Mismatch Stress
(VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz, VSWR = 20:1, all phase angles)
ψ
No Degradation in Output Power
Figure 1. Broadband Test Fixture
C1 — 39 pF, 100 Mil Chip Capacitor C2, C8, C15 — 0.8–8.0 pF Johansen Gigatrim C3, C4 — 12 pF, Mini–Unelco C5, C13 — 1000 pF, 350 V Unelco C6, C14 — 10 µF, 25 V Tantalum C7, C11, C12 — 91 pF, Mini–Unelco C9 — 5.0 pF, MIni–Unelco C10 — 47 pF, 100 Mil Chip Capacitor
L1, L6 — 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor L2, L5 — Ferrite Bead L3 — 4 Turns #16 AWG Choke L4 — 0.5, #18 AWG Wire T1, T4 — 50 Ohm Microstrip Line T2 — W = 165 Mils, ȏ = 1946 Mils T3 — W = 166 Mils, ȏ = 1563 Mils PC Board — 0.031 Glass Teflon (εr = 2.56)
SHORTED
PLUG
(FOR
VRE
TEST)
+V
CC
GND
0.685
DUT
SOCKETS
+
+
C1
C11
T1 T2 T3 T4
C6 C5
L1
L2
C7
L3
C2
C4
C3 C9
L5
L6
C12
C13 C14
C15
C10
C8
L4
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