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MRF891 MRF891SMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 24 volt UHF large–signal, common–emitter amplifier applications in industrial and commercial FM e quipment operating in the range of
800–960 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min
• Series Equivalent Large–Signal Characterization
• Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output
Power and Supply Voltage
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Emitter Voltage V
CES
55 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
0.6 Adc
Total Device Dissipation @ TA = 50°C (1)
Derate above 50°C
P
D
18
0.143
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
7.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V
(BR)CEO
30 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V
(BR)CES
55 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.5 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0, TC = 25°C)
I
CES
— — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
h
FE
30 — 150 —
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.