Motorola MRF891S, MRF891 Datasheet

2–11

MRF891 MRF891SMOTOROLA RF DEVICE DATA

The RF Line

 
  

. . . designed for 24 volt UHF large–signal, common–emitter amplifier applica­tions in industrial and commercial FM e quipment operating in the range of
800–960 MHz.

• Specified 24 Volt, 900 MHz Characteristics
Output Power = 5.0 Watts
Power Gain = 9.0 dB Min
Efficiency = 50% Min

• Series Equivalent Large–Signal Characterization

• Capable of Withstanding 20:1 VSWR Load Mismatch at Rated Output

Power and Supply Voltage

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Silicon Nitride Passivated

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

30 Vdc

Collector–Emitter Voltage V

CES

55 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

0.6 Adc

Total Device Dissipation @ TA = 50°C (1)

Derate above 50°C

P

D

18

0.143

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

θJC

7.0 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 20 mAdc, IB = 0)

V

(BR)CEO

30 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 20 mAdc, VBE = 0)

V

(BR)CES

55 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 0.5 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 30 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 1.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 5.0 Vdc)

h

FE

30 — 150 —

NOTES: (continued)

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF891/D



SEMICONDUCTOR TECHNICAL DATA





5.0 W, 900 MHz
RF POWER

TRANSISTORS

NPN SILICON

CASE 319–07, STYLE 2

MRF891

CASE 319A–02, STYLE 2

MRF891S

 Motorola, Inc. 1994

REV 6

MRF891 MRF891S
2–12

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 24 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 6.5 8.0 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain (Broadband)

(VCC = 24 Vdc, P

out

= 5.0 W, f = 900 MHz)

G

pe

9.0 10 — dB

Collector Efficiency

(VCC = 24 Vdc, P

out

= 5.0 W, f = 900 MHz)

η 50 57 — %

Load Mismatch Stress

(VCC = 24 Vdc, Pin = 0.63 W, f = 900 MHz,
VSWR = 20:1, all phase angles)

ψ

No Degradation in Output Power

Figure 1. Broadband Test Fixture

C1 — 39 pF, 100 Mil Chip Capacitor
C2, C8, C15 — 0.8–8.0 pF Johansen Gigatrim
C3, C4 — 12 pF, Mini–Unelco
C5, C13 — 1000 pF, 350 V Unelco
C6, C14 — 10 µF, 25 V Tantalum
C7, C11, C12 — 91 pF, Mini–Unelco
C9 — 5.0 pF, MIni–Unelco
C10 — 47 pF, 100 Mil Chip Capacitor

L1, L6 — 10 Turns #20 AWG Around 10 Ohm 1/2 Watt Resistor
L2, L5 — Ferrite Bead
L3 — 4 Turns #16 AWG Choke
L4 — 0.5″, #18 AWG Wire
T1, T4 — 50 Ohm Microstrip Line
T2 — W = 165 Mils, ȏ = 1946 Mils
T3 — W = 166 Mils, ȏ = 1563 Mils
PC Board — 0.031″ Glass Teflon (εr = 2.56)

SHORTED

PLUG

(FOR

∆

VRE

TEST)

+V

CC

GND

0.685

″

DUT

SOCKETS

+

+

C1

C11

T1 T2 T3 T4

C6 C5

L1

L2

C7

L3

C2

C4

C3 C9

L5

L6

C12

C13 C14

C15

C10

C8

L4