Motorola MRF858, MRF858S Datasheet
1
MRF858 MRF858SMOTOROLA RF DEVICE DATA
The RF Line
Designed for 24 Volt UHF l arge–signal, common e mitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics
Output Power = 3.6 Watts CW
Minimum Power Gain = 11 dB
Minimum ITO = +44.5 dBm
Typical Noise Figure = 6 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.85 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
55 Vdc
Emitter–Base Voltage V
EBO
4 Vdc
Total Device Dissipation @ TC = 50°C
Derate above 50°C
P
D
20
0.138
Watts
W/°C
Operating Junction Temperature T
J
200 °C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance (TJ = 150°C, TC = 50°C) R
θJC
6.9 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V
(BR)CEO
28 35 — Vdc
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V
(BR)CES
55 85 — Vdc
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V
(BR)CBO
55 85 — Vdc
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) V
(BR)EBO
4 5 — Vdc
Collector Cutoff Current (VCB = 24 V, IE = 0) I
CES
— — 1 mA
(continued)
Teflon is a registered trademark of du Pont de Nemours & Co., Inc.
Order this document
by MRF858/D
SEMICONDUCTOR TECHNICAL DATA
CLASS A
800–960 MHz
3.6 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 319–07, STYLE 2
MRF858
CASE 319A–02, STYLE 2
MRF858S
Motorola, Inc. 1995
REV 2
MRF858 MRF858S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
h
FE
30 60 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
C
ob
— 6.5 8 pF
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
P
g
11 12 — dB
Load Mismatch
(Po = 3.6 W)
(VCE = 24 V, IC = 0.5 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
ψ
No Degradation in
Output Power
RF Input Overdrive
(VCE = 24 V, IC = 0.5 A, f = 840 MHz)
No degradation
P
in(over)
— — 0.85 W
Third Order Intercept Point
(VCE = 24 V, IC = 0.5 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
ITO +44.5 +45.5 — dBm
Noise Figure
(VCE = 24 V, IC = 0.5 A, f = 900 MHz)
NF — 6 — dB
Input Return Loss
(VCE = 24 V, IC = 0.5 A, f = 840–900 MHz,
Power Output = 3.6 W)
IRL — –12 –9 dB
Table 1. MRF858 Common Emitter S–Parameters
S
11
S
21
S
12
S
22
V
CE
(V)
I
C
(A)
f
(MHz)
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
24 0.5 800
820
840
860
880
900
920
940
960
0.942
0.942
0.941
0.940
0.941
0.940
0.940
0.940
0.940
167
166
166
166
165
165
165
164
164
1.493
1.453
1.415
1.379
1.351
1.320
1.289
1.252
1.222
50
50
49
48
47
46
45
44
43
0.027
0.027
0.028
0.028
0.029
0.030
0.030
0.031
0.031
58
58
59
59
59
59
59
59
59
0.538
0.541
0.545
0.550
0.553
0.557
0.562
0.566
0.570
–165
–164
–165
–165
–165
–165
–165
–165
–165
Table 2. Zin and ZOL* versus Frequency
f
(MHz)
Z
in
(Ohms)
ZOL*
(Ohms)
840
870
900
1.1
1.1
1.2
2.9
3.5
3.5
9.9
9.5
9
–14.4
–14.6
–14.5
VCE = 24 V, IC = 0.5 A, Po = 3.6 W
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
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