Motorola MRF857S Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
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by MRF857/D
Designed for 24 Volt UHF large–signal, common emitter, class A linear
amplifier applications in industrial and commercial equipment operating in the
range of 800–960 MHz.
• Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics
Output Power = 2.1 Watts CW
Minimum Power Gain = 12.5 dB
Minimum ITO = +43 dBm
Typical Noise Figure = 5.25 dB
• Characterized with Small–Signal S–Parameters and Series Equivalent
Large–Signal Parameters from 800–960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1
VSWR @ 24 Vdc, IC = 0.3 Adc and Rated Output Power
• Will Withstand RF Input Overdrive of 0.4 W CW
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CLASS A
800–960 MHz
2.1 W (CW), 24 V
NPN SILICON
RF POWER TRANSISTOR
CASE 305D–01, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Total Device Dissipation @ TC = 50°C
Derate above 50°C
Operating Junction Temperature T
Storage Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance (TJ = 150°C, TC = 50°C) R
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V
Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) V
Collector Cutoff Current (VCB = 24 V, IE = 0) I
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CES
CEO
CBO
EBO
P
D
J
stg
θJC
28 35 — Vdc
55 85 — Vdc
55 85 — Vdc
4 5 — Vdc
— — 1 mA
30 Vdc
55 Vdc
4 Vdc
17
0.114
200 °C
–65 to +150 °C
8.4 °C/W
Watts
W/°C
(continued)
REV 3
Motorola, Inc. 1997
MRF857SMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued
V
CE
I
C
f
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 A, VCE = 5 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 24 V, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common–Emitter Power Gain
(VCE = 24 V, IC = 0.3 A, f = 840–900 MHz,
Power Output = 2.1 W)
Load Mismatch
(Po = 2.1 W)
(VCE = 24 V, IC = 0.3 A, f = 840 MHz,
Load VSWR = 30:1, All Phase Angles)
RF Input Overdrive
(VCE = 24 V, IC = 0.3 A, f = 840 MHz)
No degradation
Third Order Intercept Point
(VCE = 24 V, IC = 0.3 A)
(f1 = 900 MHz, f2 = 900.1 MHz,
Meas. @ IMD 3rd Order = –40 dBc)
Noise Figure
(VCE = 24 V, IC = 0.3 A, f = 900 MHz)
Input Return Loss
(VCE = 24 V, IC = 0.3 A, f = 840–900 MHz,
Power Output = 2.1 W)
h
FE
C
ob
P
g
ψ
P
in(over)
ITO +43 +44.5 — dBm
NF — 5.25 — dB
IRL — –15 –10 dB
30 60 120 —
2.4 3.3 4.4 pF
12.5 13.5 — dB
No Degradation in
Output Power
— — 0.4 W
T able 1. MRF857S Common Emitter S–Parameters
V
(V)
24 0.3 800
I
(A)
(MHz)
f
820
840
860
880
900
920
940
960
S
11
|S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
0.915
0.915
0.915
0.913
0.914
0.914
0.913
0.915
0.916
165
165
165
164
164
163
163
162
162
2.098
2.049
1.991
1.951
1.912
1.865
1.832
1.783
1.748
S
21
54
53
52
51
50
49
48
47
46
0.037
0.038
0.038
0.039
0.040
0.041
0.042
0.043
0.043
S
12
58
58
58
59
59
59
59
59
59
0.343
0.345
0.349
0.352
0.355
0.359
0.362
0.366
0.369
T able 2. Zin and ZOL* versus Frequency
f
(MHz)
840
870
900
ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.
1.5
1.7
1.5
Z
in
(Ohms)
4.4
4.7
4.8
VCE = 24 V, IC = 0.3 A, Po = 2.1 W
ZOL*
(Ohms)
18.4
18.0
14.9
S
22
–26.3
–26.1
–26.2
–157
–157
–157
–158
–158
–158
–158
–159
–159
MRF857S
MOTOROLA RF DEVICE DATA
2
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