Motorola MRF847 Datasheet
1
MRF847MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM e quipment operating in the range of
806–960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16.5 Vdc
Collector–Base Voltage V
CBO
38 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
12 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
150
0.85
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.17 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V
(BR)CEO
16.5 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V
(BR)CES
38 — — Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
I
CES
— — 10 mAdc
(continued)
Order this document
by MRF847/D
SEMICONDUCTOR TECHNICAL DATA
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
Motorola, Inc. 1994
MRF847
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
h
FE
40 65 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 75 90 pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 12.5 Vdc, P
out
= 45 W, f = 870 MHz)
G
PB
4.5 5.5 — dB
Collector Efficiency
(VCC = 12.5 Vdc, P
out
= 45 W, f = 870 MHz)
η
c
60 68 — %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 16 W, f = 870 MHz,
VSWR = 10:1, All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. 806–870 MHz Broadband Test Circuit
C1 — 51 pF, 100 mil Chip Capacitor
C2 — 12 pF, Mini–Underwood
C3 — 11 pF, Mini–Underwood
C4, C5 — 21 pF, Mini–Underwood
C6 — 0.08–8.0 pF Johansen Gigatrim
C7 — 47 pF, 100 mil Chip Capacitor
C8, C13 — 10 µF, 25 WV Electrolytic Capacitor
C9, C12 — 1000 pF Unelco J101
C10, C11 — 91 pF Mini–Underwood
L1, L2 — 4 Turns #18 Enameled, 200 mil ID
L3, L4 — 12 Turns #22 Enameled, Wound Over 10 Ω Resistor
TL1, TL4 — 50 Ω Microstrip Line
TL2 — Microstrip (Zo = 38 ohms, λ/4 @ 838 MHz)
TL3 — Microstrip (Zo = 28 ohms, λ/4 @ 838 MHz)
Board Material — 0.032″ Glass–Teflon, 2 oz. cu. clad, εr = 2.56
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Vre PORT
SOCKET ASSY.
C1
C10
D.U.T.
B
+
+12.5 V
50
Ω
TL1 TL2 TL3 TL4
+
50
Ω
L3
C8
C9
L1
C3 C4
C2 C5
C6
C7
C11
C12 C13
B
L4
L2
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