Motorola MRF840 Datasheet
1
MRF840MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 12.5 volt UHF large–signal, common–base amplifier applications in industrial and commercial FM e quipment operating in the range of
806–960 MHz.
• Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 10 Watts
Power Gain = 6.0 dB Min
Efficiency = 50% Min
• Series Equivalent Large–Signal Characterization
• Internally Matched Input for Broadband Operation
• Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @
15.5 Volt Supply and 50% RF Overdrive
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Silicon Nitride Passivated
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
3.8 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
40
0.32
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
3.1 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V
(BR)CEO
16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V
(BR)CES
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 2.0 mAdc
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF840/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319–07, STYLE 1
Motorola, Inc. 1994
REV 6
MRF840
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
h
FE
10 — — —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 24 35 pF
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(P
out
= 10 W, VCC = 12.5 Vdc, f = 870 MHz)
G
PE
6.0 7.0 — dB
Collector Efficiency
(P
out
= 10 W, VCC = 12.5 Vdc, f = 870 MHz)
η 50 55 — %
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 3.0 W, (3) f = 870 MHz,
VSWR = 20:1, all phase angles)
—
No Degradation in Output Power
NOTE:
3. Pin = 150% of the typical input power requirement for 10 W output power @ 12.5 Vdc.
T3
Figure 1. 870 MHz Test Circuit
C1, C12 — 50 pF, 100 Mil Chip Capacitor
C2, C11 — 15 µF, 20 V Tantalum
C3, C10 — 1000 pF, 350 V UNELCO
C4, C9 — 91 pF Mini–Underwood
C5 — 15 pF
C6 — 15 pF
C7 — 15 pF
C8 — 15 pF
L1, L6 — 11 Turns 20 AWG Around 10 Ω 1/2 W Resistor
L2, L5 — Ferrite Bead
L3, L4 — 4 Turn 20 AWG 0.2″ I.D.
T1, T4 — ZO = 50 Ω
T2 — ZO = 30 Ω ȏ = λ/4 @ 838 MHz
T3 — ZO = 13.5 Ω ȏ= λ/4 @ 838 MHz
L7 — 18 AWG Wire Loop
L1
L2
L3 L4
L5
L6
T4
C5
C6
C7
C8
T1 T2
C1 C12
C2 C3 C10 C11
C4 C9
L7
RF
OUTPUT
RF
INPUT
0.25
″
0.5
″
SHORTING
PLUG
SOCKET SOCKET
D.U.T.
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