Motorola MRF8372R1, MRF8372R2 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large signal predriver stages in 800 MHz
and UHF frequency ranges.
• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)
• State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
• Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel
Order this document
by MRF8372/D
750 mW, 870 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
CASE 751–05, STYLE 1
SORF (SO–8)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
Storage Temperature Range TJ, T
Maximum Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
DEVICE MARKING
MRF8372 = 8372
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CEO
CBO
EBO
C
P
D
stg
Jmax
θJC
16 Vdc
36 Vdc
4.0 Vdc
200 mAdc
1.67
22.2
–55 to +150 °C
150 °C
45 °C/W
Watts
mW/°C
Motorola, Inc. 1997
(Replaces MRF837/D)
MRF8372R1, R2MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
Collector Efficiency
(VCC = 12.5 Vdc, P
= 0.75 W, f = 870 MHz)
out
= 0.75 W, f = 870 MHz)
out
= 25°C unless otherwise noted.)
C
V
V
V
(BR)CEO
(BR)CES
(BR)EBO
I
CES
h
FE
C
ob
G
pe
η 55 60 — %
16 — — Vdc
36 — — Vdc
4.0 — — Vdc
— — 0.1 mAdc
30 90 200 —
— 1.8 2.5 pF
8.0 10 — dB
MRF8372R1, R2
2
MOTOROLA RF DEVICE DATA
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