Motorola MRF8372 Schematic [ru]

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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Designed primarily for wideband large signal predriver stages in 800 MHz

and UHF frequency ranges.

• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 750 mW
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)

• State–of–the–Art Technology
Fine Line Geometry
Gold Top Metal and Wires
Silicon Nitride Passivated
Ion Implanted Arsenic Emitters

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

• Order MRF8372 in tape and reel packaging by adding suffix:
R1 suffix = 500 units per reel
R2 suffix = 2,500 units per reel

Order this document

by MRF8372/D

 

750 mW, 870 MHz

RF LOW POWER

TRANSISTOR
NPN SILICON

CASE 751–05, STYLE 1

SORF (SO–8)

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 75°C (1)

Derate above 75°C
Storage Temperature Range TJ, T
Maximum Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

DEVICE MARKING

MRF8372 = 8372

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

CEO
CBO
EBO

C

P

D

stg

Jmax

θJC

16 Vdc
36 Vdc

4.0 Vdc

200 mAdc

1.67

22.2

–55 to +150 °C

150 °C

45 °C/W

Watts

mW/°C

 Motorola, Inc. 1997

(Replaces MRF837/D)

MRF8372R1, R2MOTOROLA RF DEVICE DATA

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ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

ON CHARACTERISTICS

DC Current Gain

(IC = 50 mAdc, VCE = 10 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P
Collector Efficiency

(VCC = 12.5 Vdc, P

= 0.75 W, f = 870 MHz)

out

= 0.75 W, f = 870 MHz)

out

= 25°C unless otherwise noted.)

C

V

V

V

(BR)CEO

(BR)CES

(BR)EBO

I

CES

h

FE

C

ob

G

pe

η 55 60 — %

16 — — Vdc

36 — — Vdc

4.0 — — Vdc

— — 0.1 mAdc

30 90 200 —

— 1.8 2.5 pF

8.0 10 — dB

MRF8372R1, R2
2

MOTOROLA RF DEVICE DATA

C6

B

L1 L2

Z1 Z2 Z3 Z4 DUT

C1

C2 C3

L3

B

C7 C8

C4

Z6Z5

C5

+

+

V

CC

–

C1, C5 — 0.8–8.0 pF Johanson Gigatrim
C2, C3 — 10 pF Ceramic Chip Capacitor
C6 — 91 pF Clamped Mica, Mini–Underwood
C4 — 47 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 1.0 µF 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B

Figure 1. 800–900 MHz Broadband Circuit

800/900 MHz BAND DATA

12

10

8

, GAIN (dB)

6

PE

G

4

2

820 840 860 880 900800

f, FREQUENCY (MHz)

G

η

IRL

PE

c

L1, L2 — 4 Turns, #21 AWG, 5/32″ ID
L3 — 7 Turns, #21 AWG, 5/32″ ID
Z1, Z2 — 1″ x 0.078″ Microstrip, Zo = 50 Ohms
Z3 — 0.25″ x 0.078″ Microstrip, Zo = 50 Ohms
Z4 — 0.15″ x 0.078″ Microstrip, Zo = 50 Ohms
Z5 — 0.30″ x 0.078″ Microstrip, Zo = 50 Ohms
Z6 — 1.63″ x 0.078″ Microstrip, Zo = 50 Ohms
PCB — 1/32″ Glass Teflon, εr = 2.56

P

= 750 mW

out

VCC = 12.5 Vdc

70

60

, COLLECTOR

c

EFFICIENCY (%)

50

η

10
15

20
25

IRL, INPUT

RETURN LOSS (dB)

Figure 2. T ypical Broadband Performance

MRF8372R1, R2MOTOROLA RF DEVICE DATA

3