Motorola MRF658 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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  

Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier

applications in industrial and commercial FM equipment operating to 520 MHz.

• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
Minimum Efficiency = 50%

• Characterized with Series Equivalent Large–Signal Impedance Parameters

from 400 to 520 MHz

• Built–In Matching Network for Broadband Operation

• Triple Ion Implanted for More Consistent Characteristics

• Implanted Emitter Ballast Resistors for Improved Ruggedness

• Silicon Nitride Passivated

• Capable of Surviving Load Mismatch Stress at all Phase Angles with

20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive

Order this document

by MRF658/D



65 W, 512 MHz

RF POWER TRANSISTOR

NPN SILICON

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 50 mAdc, IB = 0)

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

I

CES

CASE 316–01, STYLE 1

CEO
CES
EBO

C

P

D

stg

θJC

16.5 29 — Vdc

38 45 — Vdc

4.0 4.6 — Vdc

— 0.1 10 mAdc

16.5 Vdc
38 Vdc

4.0 Vdc
15 Adc

175

1.0

– 65 to +150 °C

1.0 °C/W

Watts

W/°C

(continued)

REV 7

 Motorola, Inc. 1997

MRF658MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

ON CHARACTERISTICS

DC Current Gain

(IC = 10 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Output Power

(VCC = 12.5 Vdc, Pin = 25 W, f = 470 & 512 MHz)

Collector Efficiency

(VCC = 12.5 Vdc, P

Output Mismatch Stress

(VCC = 15.5 Vdc, Pin = 32 W, f = 512 MHz, VSWR 20:1,
All Phase Angles)

= 65 W, f = 470 & 512 MHz)

out

h

FE

C

ob

P

out

η 50 60 — %

ψ No Degradation in Output Power

40 85 120 —

— 170 220 pF

65 — — W

B4

B3

L2

L3

C19

0.18 µF

C11

+

C12

12.5 Vdc

C20

10 µF

LOAD % = 50 OHMS

DELTA VRE PORT
(NORMALL Y SHOR TED)

C13

µ

F

10

RF INPUT RF OUTPUT

N1 N2

B1–B4 — Long Bead, Fair Rite (2743019446)
C1 — 56 pF , Chip Capacitor, Murata Erie
C2 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C3 — 39 pF , Chip Capacitor, Murata Erie
C4 — 1–20 pF Trimmer, Johanson–JMC 5501
C5 — 33 pF , Miniature Clamped Mica, SAHA
C6 — 33 pF , Miniature Clamped Mica, SAHA
C7 — 33 pF , Miniature Clamped Mica, SAHA
C8 — 27 pF , Miniature Clamped Mica, SAHA
C11 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200
C12 — 110 pF, Chip Capacitor, Murata Erie
C13 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R
C14 — 0.18 µF Chip Capacitor
C15 — 130 pF, Chip Capacitor, Murata Erie

B1

B2

+

C14

0.18 µF

C3

C1

C2 C4

C15 C16 C17 C18

L1

SOCKET

D.U.T.

C5

C6

C16 — 130 pF, Chip Capacitor, Murata Erie
C17 — 130 pF, Chip Capacitor, Murata Erie
C18 — 130 pF, Chip Capacitor, Murata Erie
C19 — 0.18 µF Chip Capacitor
C20 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R

Board — 1/16″ Glass Teflon, εr = 2.55, Keene (GX–0600–55–22)
L1, L2 — 5 Turns, 20 AWG, ID 0.126″
L3 — 2 Turns, 26 AWG, ID 0.073″
N1, N2 — Type N Flange, Omni Spectra (3052–1648–10)

Murata Erie Chip Capacitors —
GRH710COGxxxx100VBE
SAHA Mini Clamped Mica Capacitors — 3HS0006–xx

C7

C8

MRF658
2

Figure 1. 512 MHz Test Circuit

MOTOROLA RF DEVICE DATA