Motorola MRF654 Datasheet

1

MRF654MOTOROLA RF DEVICE DATA

The RF Line

 
  

. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.

• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 15 W
Minimum Gain = 7.8 dB
Efficiency = 55%

• Built–In Matching Network for Broadband Operation

• Gold Metallized, Emitter Ballasted for Long Life and Reliability

• Capable of 20:1 VSWR Load Mismatch at 15.5 V Supply Voltage

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

4.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

44

0.25

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

4.0 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector–Cutoff Current

(VCE = 15 Vdc, VBE = 0)

I

CES

— — 2.0 mAdc

(continued)

Order this document

by MRF654/D



SEMICONDUCTOR TECHNICAL DATA



15 W, 470 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 244–04, STYLE 1

 Motorola, Inc. 1994

REV 6

MRF654
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc)

h

FE

20 — 120 —

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 31 45 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

out

= 15 W, f = 512 MHz)

G

pe

7.8 8.8 — dB

Collector Efficiency

(VCC = 12.5 Vdc, P

out

= 15 W, f = 512 MHz)

η 55 63 — %

Load Mismatch Stress

(VCC = 15.5 Vdc, f = 512 MHz, Pin = 3.0 W,
VSWR = 20:1, All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. 440–512 MHz Broadband Test Circuit

C1, C5 — 68 pF Mini–Unelco
C2, C3 — 33 pF, Mini–Unelco
C4 — 47 pF, Mini–Unelco
C6, C11 — 10 µF, 25 V Tantalum
C7, C10 — 0.1 µF, Ceramic
C8, C9 — 91 pF, Mini–Unelco
L1, L4 — 4–1/2 Turns, #18 AWG, Enamel Covered, 0.16″ ID

L2, L3 — 2 Turns, #18 AWG Enamel Covered, 0.16″ ID
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Z1–Z6 — See PCB Artwork
PCB — 1/32″ G–10, εr = 4.5 @ UHF
Socket — See Socket Drawings
JP1 — Jumper, #14 AWG w/Banana Plugs

JP1 L1

B B

L4

C6 C8C7 C9 C10 C11

+

V

CC

–

SOCKET

L2 L3

C1

C2

C3 C4

Z1 Z2 Z3 Z4 Z5

C5

Z6

D.U.T.

+

+