Motorola MRF284S Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Sub–Micron MOSFET Line

    

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from
1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and wireless local loop.

• Specified Two–Tone Performance @ 2000 MHz, 26 Volts

Output Power = 30 Watts (PEP)
Power Gain = 9 dB
Efficiency = 30%
Intermodulation Distortion = –29 dBc

• Typical Single–Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts (CW)
Power Gain = 9.5 dB
Efficiency = 45%

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)

Output Power

Order this document

by MRF284/D

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30 W, 2000 MHz, 26 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B–01, STYLE 1

(MRF284)

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0)
Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0)

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

CASE 360C–03, STYLE 1

(MRF284S)

DSS

GS

P

D

stg

J

θJC

65 — — Vdc

— — 1.0 µAdc

— — 10 µAdc

65 Vdc

±20 Vdc

87.5

0.5

–65 to +150 °C

200 °C

2.0 °C/W

Watts

W/°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 3

 Motorola, Inc. 1997

MRF284 MRF284SMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 150 µAdc)
Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 200 mAdc)
Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1.0 Adc)
Forward Transconductance

(VDS = 10 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (in Motorola Test Fixture)

Common–Source Power Gain

(VDD = 26 Vdc, P

f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Drain Efficiency

(VDD = 26 Vdc, P

f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion

(VDD = 26 Vdc, P

f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss

(VDD = 26 Vdc, P

f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Common–Source Amplifier Power Gain

(VDD = 26 Vdc, P

f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Drain Efficiency

(VDD = 26 Vdc, P

f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion

(VDD = 26 Vdc, P

f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss

(VDD = 26 Vdc, P

f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Common–Source Amplifier Power Gain

(VDD = 26 Vdc, P

f1 = 2000.0 MHz)
Drain Efficiency

(VDD = 26 Vdc, P

f1 = 2000.0 MHz)
Output Mismatch Stress

(VDD = 26 Vdc, P

f1 = 2000.0 MHz, VSWR = 10:1,

at All Phase Angles)

= 30 W, IDQ = 200 mA,

out

= 30 W, IDQ = 200 mA,

out

= 30 W, IDQ = 200 mA,

out

= 30 W, IDQ = 200 mA,

out

= 30 W PEP, IDQ = 200 mA,

out

= 30 W PEP, IDQ = 200 mA,

out

= 30 W PEP, IDQ = 200 mA,

out

= 30 W PEP, IDQ = 200 mA,

out

= 30 W CW, IDQ = 200 mA,

out

= 30 W CW, IDQ = 200 mA,

out

= 30 W CW, IDQ = 200 mA,

out

C

= 25°C unless otherwise noted)

V

GS(th)

V

GS(q)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 30 35 — %

IMD — –32 –29 dBc

IRL 9 15 — dB

G

ps

η — 35 — %

IMD — –34 — dBc

IRL 9 15 — dB

G

ps

η 35 45 — %

Ψ

2.0 3.0 4.0 Vdc

3.0 4.0 5.0 Vdc

— 0.3 0.6 Vdc

1.0 1.5 — S

— 43 — pF

— 23 — pF

— 1.4 — pF

9 10.5 — dB

9 10.4 — dB

8.5 9.5 — dB

No Degradation In Output Power

MRF284 MRF284S
2

MOTOROLA RF DEVICE DATA

VGG

+

–

(BIAS)

VDD

C4

B2

R2

B1

+

R1

C1

C7

B3

R3

C5 C8

B4

R4

C15C13

C12

B5

R5

C14

B6

R6

C17

(DC Supply)

+

+

_

L1

RF

INPUT

Z1 Z2 Z3 Z4

C6

C2

C3

B1 – B6 Ferrite Bead, Round
C1, C17 470 µF, 63 V, Mallory Electrolytic Capacitor
C2 0.6 – 4.5 pF Johansen Gigatrim Variable Capacitors
C3, C9 0.8 – 8.0 pF Johansen Gigatrim Variable Capacitors
C4, C14 0.1 µF Chip Capacitor, KEMET
C5, C15 91 pF ATC RF Chip Capacitors, Case “B”
C6, C16 10 pF ATC RF Chip Capacitors, Case “B”
C7, C12 1000 pF ATC RF Chip Capacitors, Case “B”
C8, C13 5.1 pF ATC RF Chip Capacitors, Case “B”
C10 2.7 pF ATC RF Chip Capacitors, Case “B”
C11 0.4 – 2.5 pF Johansen Gigatrim Variable Capacitors
L1 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH
L2, L3 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH
L4 2 Turns, #24 AWG, 0.85″ OD, 0.042″ ID, 0.064″ Long, 5.2 nH
R1 – R6 12 Ω Fixed Film Chip Resistor 0.08″ x 0.13″
Z1 0.145″ x 0.080″ Microstrip
Z2 0.680″ x 0.080″ Microstrip

Z5

Z6

L2

Z7 Z8

C9

Z9

DUT

Z10

C10

L3

Z11

Z12 Z13 Z14

C16

C11

Z3 0.185″ x 0.080″ Microstrip
Z4 0.395″ x 0.080″ Microstrip
Z5 0.490″ x 0.080″ Microstrip
Z6 0.035″ x 0.325″ Microstrip
Z7 0.240″ x 0.325″ Microstrip
Z8 0.210″ x 0.515″ Microstrip
Z9 0.130″ x 0.515″ Microstrip
Z10 0.080″ x 0.515″ Microstrip
Z11 0.190″ x 0.325″ Microstrip
Z12 0.090″ x 0.325″ Microstrip
Z13 0.515″ x 0.080″ Microstrip
Z14 0.860″ x 0.080″ Microstrip
Z15 0.510″ x 0.080″ Microstrip
Board 0.030″ Glass Teflon, 2 oz Copper,

3 x 5″ Dimensions, Manufacturer;
Arlon, P/N: GX0300–55–22, εr = 2.55

L4

Z15

RF

OUTPUT

Figure 1. Schematic of 1.93–2.0 GHz Broadband T est Circuit

MRF284 MRF284SMOTOROLA RF DEVICE DATA

3

V

SUPPLY

+

R1

P1

Q1

R2

–

RF

INPUT

R4

L1

Z1 Z2 Z3 Z5

R3

L2

Q2

C3

R5

+

C1

+

V

Z4

DD

R6

+

Z6L3Z7 Z8

C5

B1

R7

C6

C8

Z9

B2

R8

DUT

C2

Z10

C4C7C9

L4

Z11

Z12

C12

B3

R9

Z13 Z15 Z16

Z14

B4

R10B5R11

C14

C15C10C13C11

C17

C16

V

DD

+

+

RF

OUTPUT

B1 – B5 Ferrite Bead, Round
C1, C9, C16 100 µF, 50 V, Electrolytic Capacitor, Sprague
C2, C13 51 pF, ATC RF Chip Capacitors, Case “B”
C3, C14 10 pF, ATC RF Chip Capacitors, Case “B”
C4, C11 12 pF, ATC RF Chip Capacitors, Case “B”
C5 0.8 – 8.0 pF Variable Capacitor, Johansen Gigatrim
C6 4.7 pF, ATC RF Chip Capacitor, Case “B”
C7, C15 91 pF, ATC RF Chip Capacitors, Case “B”
C8 1000 pF, ATC RF Chip Capacitor, Case “B”
C10 0.1 µF, Chip Capacitor, KEMET
C12, C17 0.6 – 4.5 pF , Variable Capacitors, Johansen Gigatrim
L1 4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID,

0.069″ Long, 10 nH

L2 5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID,

0.128″ Long, 12.5 nH

L3, L4 9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID,

0.170″ Long, 30.8 nH
P1 1000 Ohm Potentiometer , 1/2 W, 10 Turns
Q1 Transistor, NPN, Motorola P/N: MJD31, Case 369A–10
Q2 Transistor, PNP, Motorola P/N: MJD32, Case 369A–10
R1 360 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″
R2 2 x 12 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″
R3 1 Ω, Wirewound, 5 W, 3% Resistor
R4 4 x 6.8 kΩ, Fixed Film Chip Resistor 0.08″ x 0.13″

Figure 2. Schematic of 2.0 GHz Class A Test Circuit

R5 2 x 1500 Ω, Fixed Film Chip Resistor 0.08″ x 0.13″
R6 270 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″
R7 – R11 12 Ω, Fixed Film Chip Resistor, 0.08″ x 0.13″
Z1 0.363″ x 0.080″ Microstrip
Z2 0.080″ x 0.080″ Microstrip
Z3 0.916″ x 0.080″ Microstrip
Z4 0.517″ x 0.080″ Microstrip
Z5 0.050″ x 0.325″ Microstrip
Z6 0.050″ x 0.325″ Microstrip
Z7 0.071″ x 0.325″ Microstrip
Z8 0.125″ x 0.325″ Microstrip
Z9 0.210″ x 0.515″ Microstrip
Z10 0.210″ x 0.515″ Microstrip
Z11 0.235″ x 0.325″ Microstrip
Z12 0.02″ x 0.325″ Microstrip
Z13 0.02″ x 0.325″ Microstrip
Z14 0.510″ x 0.080″ Microstrip
Z15 0.990″ x 0.080″ Microstrip
Z16 0.390″ x 0.080″ Microstrip
Raw PCB
Material 0.030″ Glass Teflon, 2 oz Copper,

3 x 5″ Dimensions, Manufacturer;
Arlon, P/N: GX–0300–55–22, εr = 2.55

MRF284 MRF284S
4

MOTOROLA RF DEVICE DATA