Motorola MRF275G Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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by MRF275G/D

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N–Channel Enhancement–Mode

Designed primarily for wideband large–signal output and driver stages from

100 – 500 MHz.

• Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 10 dB (Min)
Efficiency — 50% (Min)
100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

• Overall Lower Capacitance @ 28 V
C

— 135 pF

iss

C

— 140 pF

oss

C

— 17 pF

rss

• Simplified AVC, ALC and Modulation

Typical data for power amplifiers in industrial and

commercial applications:

• Typical Performance @ 400 MHz, 28 Vdc
Output Power — 150 Watts
Power Gain — 12.5 dB
Efficiency — 60%

• Typical Performance @ 225 MHz, 28 Vdc
Output Power — 200 Watts
Power Gain — 15 dB
Efficiency — 65%

G
G

D

D



150 W, 28 V, 500 MHz

N–CHANNEL MOS

BROADBAND

100 – 500 MHz

RF POWER FET

S

(FLANGE)

CASE 375–04, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage

(RGS = 1.0 MΩ)
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

V

DSS

DGR

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Adc

26 Adc

400

2.27

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.44 °C/W

Watts

W/°C

 Motorola, Inc. 1997

MRF275GMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 5 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) C

FUNCTIONAL CHARACTERISTICS (2) (Figure 1)

Common Source Power Gain

(VDD = 28 V, P
Drain Efficiency

(VDD = 28 V, P
Electrical Ruggedness

(VDD = 28 V, P

VSWR 30:1 at all Phase Angles)

(1.) Each side of device measured separately.
(2.) Measured in push–pull configuration.

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

out

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

out

= 150 W, f = 500 MHz, IDQ = 2 x 100 mA,

out

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

η 50 55 — %

ψ

65 — — Vdc

— — 1 mA

— — 1 µA

1.5 2.5 4.5 Vdc

0.5 0.9 1.5 Vdc
3 3.75 — mhos

— 135 — pF
— 140 — pF
— 17 — pF

10 11.2 — dB

No Degradation in Output Power

MRF275G
2

MOTOROLA RF DEVICE DATA

A

B

+V

GG

C14

B1

B1 Balun, 50 Ω, 0.086″ O.D. 2″ Long, Semi Rigid Coax
B2 Balun, 50 Ω, Coax 0.141″ O.D. 2″ Long, Semi Rigid
C1, C2, C3, C4,
C10, C11, C12, C13 270 pF, ATC Chip Capacitor
C5, C8 1.0–20 pF, Trimmer Capacitor, Johanson
C6 22 pF, Mini–Unelco Capacitor
C7 15 pF, Unelco Capacitor
C9 2.1 pF, ATC Chip Capacitor
C14, C15, C16,
C20, C21, C22 0.1 µF, Ceramic Capacitor
C17, C18 680 pF, Feedthru Capacitor
C19 10 µF, 50 V, Electrolytic Capacitor, Tantalum
L1, L2 10 Turns AWG #24,

L3, L4 10 Turns AWG #18,

R1

C1

Z1

C2

C5 C6 C7 C8

C3

Z2

C4

0.145″ O.D., 106 nH
T aylor–Spring Inductor

0.340″ I.D., Enameled Wire

C15

L1

Z3 Z7Z5

Z4

L2

C20 C21

C16

D.U.T.

Figure 1. 500 MHz T est Circuit

C11

C12

L6

B2

C19

+28 V

+

C17 C18

L5

C22

L3

C10

C9

Z8Z6

C13

L4

BA

L5 Ferroxcube VK200 20/4B
L6 4 Turns #16, 0.340″ I.D.,

Enameled Wire
R1 1.0 kΩ,1/4 W Resistor
W1 – W4 20 x 200 x 250 mils, Wear Pads,

Beryllium–Copper , (See

Component Location Diagram)
Z1, Z2 1.10″ x 0.245″, Microstrip Line
Z3, Z4, Z5, Z6 0.300″ x 0.245″, Microstrip Line
Z7, Z8 1.00″ x 0.245″, Microstrip Line

Board material 0.060″ Teflon–fiberglass,

εr = 2.55, copper clad both sides, 2 oz. copper.

Points A are connected together on PCB.
Points B are connected together on PCB.

MRF275GMOTOROLA RF DEVICE DATA

3

TYPICAL CHARACTERISTICS

300

250

200

150

100

, OUTPUT POWER (WATTS)

out

P

50

0

515

10

Pin, INPUT POWER (Watts)

225 MHz

Figure 2. Output Power versus Input Power

10

VDS = 10 V

9

V

= 2.5 V

GS(th)

8
7
6
5
4
3

, DRAIN CURRENT (AMPS)

D

I

2
1
0

0

VGS, GATE–SOURCE VOLTAGE (V)

2

315

400 MHz

IDQ = 2 x 100 mA
VDD = 28 V

20

4

500 MHz

4.52.50.5 3.51.5

25

, OUTPUT POWER (WATTS)

out

P

180
160
140
120
100

, OUTPUT POWER (WATTS)

out

P

160
140
120
100

80
60
40
20

0

–10 00

–8

–6 –4

VGS, GATE–SOURCE VOLTAGE (V)

VDS = 28 V
IDQ = 2 x 100 mA
Pin = Constant
f = 500 MHz

–2

Figure 3. Output Power versus Gate Voltage

Pin = 14 W

80
60
40
20

0

14 1612

18 20 28

VDD, SUPPLY VOLT AGE (V)

IDQ = 2 x 100 mA
f = 500 MHz

22 26

42

10 W

6 W

24

Figure 4. Drain Current versus Gate Voltage

(Transfer Characteristics)

200
180
160
140
120
100

, OUTPUT POWER (WATTS)

out

P

80
60
40
20

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLT AGE (V)

Pin = 14 W

IDQ = 2 x 100 mA
f = 400 MHz

Figure 6. Output Power versus Supply Voltage

MRF275G
4

10 W

6 W

Figure 5. Output Power versus Supply Voltage

250

200

150

100

, OUTPUT POWER (WATTS)

out

P

50

0

14 1612 18 20 282422 26

VDD, SUPPLY VOLT AGE (V)

IDQ = 2 x 100 mA
f = 225 MHz

Figure 7. Output Power versus Supply Voltage

MOTOROLA RF DEVICE DATA

12 W

10 W

Pin = 4 W