Motorola MRF2628 Datasheet
1
MRF2628MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and
industrial FM equipment.
• Compact .280 Stud Package
• Specified 12.5 V, 175 MHz Performance
Output Power = 15 Watts
Power Gain = 12 dB Min
Efficiency = 60% Min
• Characterized to 220 MHz
• Load Mismatch Capability at High Line and Overdrive
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
18 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
2.5 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
40
0.23
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
4.0 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V
(BR)CEO
18 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V
(BR)CES
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 1.0 mAdc
(continued)
Order this document
by MRF2628/D
SEMICONDUCTOR TECHNICAL DATA
15 W 136–220 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
Motorola, Inc. 1994
REV 6
MRF2628
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc)
h
FE
10 70 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 33 60 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
out
= 15 W, f = 175 MHz)
G
pe
12 13 — dB
Collector Efficiency
(VCC = 12.5 Vdc, P
out
= 15 W, f = 175 MHz)
η 60 68 — %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
ψ
No Degradation in Output Power
Figure 1. Broadband Circuit
C1, C10, C11 — 1000 pF Ceramic Chip Capacitor
C2 — 27 pF Mini Unelco Capacitor
C3 — 33 pF Mini Unelco Capacitor
C4, C5 — 270 pF Unelco J101 Capacitor
C6, C9 — 18 pF Mini Unelco Capacitor
C7 — 91 pF Mini Unelco Capacitor
C8 — 68 pF Mini Unelco Capacitor
C12 — 0.1 µF Monolythic Capacitor
C13 — 100 µF, 15 V Electrolytic
L1 — 3 Turns #18 AWG, 3/16″ ID
L2 — 1–1/8″ #18 AWG into 1/2″ High Loop
L3 — Copper Pad, 0.200 x 0.400 x 0.060
L4 — 1/4″ #18 AWG into 1/8″ High Loop
L5 — 3 Turns #24 AWG Enameled, 3/32″ ID
L6 — 6 Turns #24 AWG Enameled, 3/32″ ID
L7 — 1–3/4″ #16 AWG into 3/4″ High Loop
R1 — 12 Ω, 1/2 W Carbon
R2 — 100 Ω, 1.0 W Carbon
R3 — 10 Ω, 1.0 W Carbon
RFC1 — 0.15 µH Molded Choke
RFC2 — Ferroxcube Choke, VK200–4B
C1
+12.5 V
RFC1
D.U.T.
L1
C2 C3 C4 C5
R1
L2 L3
RFC2
R3
C12 C13
+
L4 L5 L6
C6 C7 C8 C9
R2
L7
C11
C10
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