Motorola MRF255 Datasheet

1

MRF255MOTOROLA RF DEVICE DATA

The RF MOSFET Line

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 

N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequencies
to 54 MHz. The high gain, broadband performance and linear characterization of
this device makes it ideal for large–signal, common source amplifier applications
in 12.5 Volt mobile and base station equipment.

• Guaranteed Performance at 54 MHz, 12.5 Volts

Output Power — 55 Watts PEP
Power Gain — 13 dB Min
Two–Tone IMD — –25 dBc Max
Efficiency — 40% Min, Two–Tone Test

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Aluminum Nitride Package Electrical Insulator

• Circuit Board Photomaster Available by Ordering Document

MRF255PHT/D from Motorola Literature Distribution.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

36 Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ) V

DGR

36 Vdc

Gate–Source Voltage V

GS

±20 Vdc

Drain Current — Continuous I

D

22 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

175

1.0

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.0 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.

Order this document

by MRF255/D

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SEMICONDUCTOR TECHNICAL DATA

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55 W, 12.5 Vdc, 54 MHz

N–CHANNEL

BROADBAND

RF POWER FET

CASE 211–11, STYLE 2

 Motorola, Inc. 1995

MRF255
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 20 mAdc)

V

(BR)DSS

36 — — Vdc

Zero Gate Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)

I

DSS

— — 5.0 mAdc

Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0)

I

GSS

— — 5.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 25 mAdc)

V

GS(th)

1.25 2.3 3.5 Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 4.0 Adc)

V

DS(on)

— — 0.4 Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3.0 Adc)

g

fs

4.2 — — S

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)

C

iss

— 140 — pF

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)

C

oss

— 285 — pF

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1.0 MHz)

C

rss

— 38 44 pF

FUNCTIONAL TESTS (In Motorola Test Fixture.)

Common Source Amplifier Power Gain, f1 = 54, f2 = 54.001 MHz

(VDD = 12.5 Vdc, P

out

= 55 W (PEP), IDQ = 400 mA)

G

ps

13 16 — dB

Intermodulation Distortion (1), f1 = 54.000 MHz, f2 = 54.001 MHz

(VDD = 12.5 Vdc, P

out

= 55 W (PEP), IDQ = 400 mA)

IMD

(d3,d5)

— –30 –25 dBc

Drain Efficiency, f1 = 54; f2 = 54.001 MHz

(VDD = 12.5 Vdc, P

out

= 55 W (PEP), IDQ = 400 mA)

η 40 45 — %

Drain Efficiency, f = 54 MHz

(VDD = 12.5 Vdc, P

out

= 55 W CW, IDQ = 400 mA)

η — 60 — %

Output Mismatch Stress, f1 = 54; f2 = 54.001 MHz

(VDD = 12.5 Vdc, P

out

= 55 W (PEP), IDQ = 400 mA,

VSWR = 20:1, at all phase angles)

ψ

No Degradation in Output Power

Before and After Test

(1) To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

3

MRF255MOTOROLA RF DEVICE DATA

Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic

C1 — 470 pF, Chip Capacitor
C2, C3, C11, C12 — 20–200 pF, Trimmer, ARCO #464
C4 — 100 pF, Chip Capacitor
C5, C17 — 100 µF, 15 V, Electrolytic
C6 — 0.001 µF, Disc Ceramic
C7, C8, C9, C10 — 330 pF, Chip Capacitor
C14 — 1200 pF, ATC Chip Capacitor
C15 — 910 pF, 500 V, Dipped Mica
C16 — 47 µF, 16 V, Electrolytic

L1 — 8 Turns, #20 AWG, 0.126″ ID
L2 — 5 Turns, #18 AWG, 0.142″ ID
L3 — 3 Turns, #20 AWG, 0.102″ ID
L4 — 7 Turns, #24 AWG, 0.070″ ID
L5 — 6.5 Turns, #18 AWG, 0.230″ ID, 0.5″ Long
N1, N2 — Type N Flange Mount
RFC1 — Ferroxcube VK–200–19/4B
R1 — 39 kΩ, 1/4 W Carbon
R2 — 150 Ω, 1/4 W Carbon
Board — G–10 .060″

V

GG

V

DD

RF

OUTPUT

RF

INPUT

RFC1

+

+ +

C5 C6 C15 C16 C17

C4

C7 C8

L5

L1 L2

R2

R1

C2 C3

C1

N1

N2

C14

C9 C10

C11 C12

L3 L4

DUT

TYPICAL CHARACTERISTICS

P , OUTPUT POWER (WATTS PEP)

out

IMD, INTERMODULATION DISTORTION (dB)

–10

–20

–30

–40

–50

–60

100

90
80
70
60
50
40
30
20
10

9080706050403020100 0 1 2 3 4

Figure 2. IMD versus Output Power

OUTPUT POWER (WATTS PEP)

Figure 3. Output Power versus Input Power

Pin, INPUT POWER (WATTS PEP)

IMD

5

IMD

3

VDD = 12.5 Vdc
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz

VDD = 12.5 Vdc
IDQ = 400 mA
f1 = 54 MHz, f2 = 54.001 MHz

P , OUTPUT POWER (WATTS CW)

out

P , OUTPUT POWER (WATTS CW)

out

100

90
80
70
60
50
40
30
20
10

100

90
80
70
60
50
40
30
20

0

10

0 1 2 3 4 161514131211109

Figure 4. Output Power versus Input Power

Pin, INPUT POWER (WATTS CW)

Figure 5. Output Power versus Supply Voltage

VDD, SUPPLY VOLTAGE (VOLTS)

VDD = 12.5 Vdc
IDQ = 400 mA
f = 54 MHz

2 W

Pin = 4 W

1 W

0.5 W

IDQ = 400 mA
f = 54 MHz