Motorola MRF247 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF Line

 
  

The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.

• Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min

• Characterized With Series Equivalent Large–Signal Impedance Parameters

• Internal Matching Network Optimized for Minimum Gain Frequency Slope

Response Over the Range 136 to 175 MHz

• Load Mismatch Capability at Rated P

and Supply Voltage

out

Order this document

by MRF247/D



75 W, 175 MHz

CONTROLLED Q

RF POWER
TRANSISTOR
NPN SILICON

CASE 316–01, STYLE 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Peak I
Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C

Storage Temperature Range T

CEO
CBO
EBO

C

P

D

stg

18 Vdc
36 Vdc

4.0 Vdc
20 Adc

250

1.43

–65 to +150 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

C

Symbol Min Typ Max Unit

θJC

0.7 °C/W

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 100 mAdc, IB = 0)

Collector–Emitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

V

(BR)CEO

V

(BR)CES

V

(BR)EBO

18 — — Vdc

36 — — Vdc

4.0 — — Vdc

REV 1

 Motorola, Inc. 1997

MRF247MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic

ON CHARACTERISTICS

DC Current Gain

(IC = 5.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

Collector Efficiency

(VCC = 12.5 Vdc, P

Load Mismatch

(VCC = 12.5 Vdc, P
VSWR = 30:1 All Phase Angles)

= 75 Watts, f = 175 MHz)

out

= 75 Watts, f = 175 MHz)

out

= 75 Watts, f = 175 MHz,

out

= 25°C unless otherwise noted.)

C

Symbol Min Typ Max Unit

h

FE

C

ob

G

PE

η 55 60 — %

ψ

10 75 150 —

— 235 300 pF

7.0 8.5 — dB

No Degradation in Output Power

L3 L6

NC

C1

C1, C17 330 pF ATC 100 mil Ceramic Capacitor
C2, C14 Johansen 1–20 pF Trimmer Capacitor
C3 40 pF Standard Unelco Clamped Mica Capacitor
C4, C16 Sprague 10 µF – 35 Vdc Electrolytic Capacitor
C5 80 pF Standard Unelco Clamped Mica Capacitor
C6, C13 91 pF Mini–Unelco Clamped Mica Capacitor
C7, C8 240 pF ATC 100 mil Ceramic Capacitor
C9, C10 180 pF ATC 100 mil Ceramic Capacitor

+ +

C4 C6 C13 C16

C3 C8 C10 C12 C15

L1 L5

C2 C5 C11 C14

L2 L4

Figure 1. Output Power versus Input Power

D.U.T.

C7 C9

C11 150 pF Standard Unelco Clamped Mica Capacitor
C12 33 pF Mini–Unelco Clamped Mica Capacitor
C15 27 pF Mini–Unelco Clamped Mica Capacitor
L1 2 Turns, 16 AWG Enameled, IDIA 0.13″
L2, L4 4 Turns, 18 AWG Enameled, IDIA 0.18″
L3, L6 VK 200 with Ferrite Bead
L5 2 Turns, 16 AWG Enameled, IDIA 0.15″

16

+

12.5 V

–

C17

100

80

60

, OUTPUT POWER (WATTS)

out

P

40

4

MRF247
2

150 MHz

175 MHz

f = 136 MHz

VCC = 12.5 V P

6 8 10 12 14 16 18 20 22 24

Pin, INPUT POWER (WATTS)

14
12
10

8
6

, POWER GAIN (dB)

PE

G

4
2

0

130

140 150 160 170 180

f, FREQUENCY (MHz)

= 75 W

out

VCC = 12.5 V

Figure 2. Output Power versus Input Power Figure 3. Power Gain versus Frequency

MOTOROLA RF DEVICE DATA