Motorola MRF240 Datasheet
1
MRF240MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 13.6 volt VHF large–signal class C and class AB linear power
amplifier applications in commercial and industrial equipment.
• High Common Emitter Power Gain
• Specified 13.6 V, 160 MHz Performance:
Output Power = 40 Watts
Power Gain = 9.0 dB Min
Efficiency = 55% Min
• Load Mismatch Capability at Rated Voltage and RF Drive
• Silicon Nitride Passivated
• Low Intermodulation Distortion, d3 = –30 dB Typ
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
8.0 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
100
0.57
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
1.75 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V
(BR)CEO
16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V
(BR)CES
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
h
FE
10 70 150 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 90 125 pF
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF240/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 145–175 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 145A–09, STYLE 1
Motorola, Inc. 1994
MRF240
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 13.6 Vdc, P
out
= 40 W, f = 160 MHz)
G
PE
9.0 10 — dB
Collector Efficiency
(VCC = 13.6 Vdc, P
out
= 40 W, f = 160 MHz)
η 55 — — %
TYPICAL SSB PERFORMANCE
Intermodulation Distortion (3)
(VCC = 13.6 Vdc, P
out
= 35 W (PEP), f1 = 146 MHz,
f2 = 146.002 MHz, ICQ = 50 mAdc)
IMD (d3) — –30 — dB
NOTE:
3. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
Figure 1. 160 MHz Test Circuit Schematic
RF
INPUT
RF
OUTPUT
+13.6 V
C8
C6
C5
C4C3C2
L1
C11C10
RFC2
C9
RFC1
C1
L4
+
–
L2 L3
BEAD
DUT
L5 C7
RFC3
+
–
C1 — 200 pF, 350 Vdc, UNELCO
C2 — 100 pF, 350 Vdc, UNELCO
C3 — 40 pF, 350 Vdc, UNELCO
C4, C5 — 80 pF, 350 Vdc, UNELCO
C6 — 1.0–20 pF, ARCO Trimmer
C7 — 100 pF 350 Vdc, UNELCO
C8 — 0.1 µF ERIE Disc Ceramic
C9 — 1.0 µF TANTALUM
C10, C11 — 680 pF ALLEN BRADLEY Feedthru
RFC1 — 0.15 µH Molded Choke
RFC2 — 10 Turns, #18 AWG on 470 Ohm,
RFC2 — 1.0 Watt Resistor
Bead — FERROXCUBE Bead
RFC3 — FERROXCUBE Choke, VK200–4B
L1 — 3.3 x 0.2 cm AIRLINE Inductor
L2 — 1.0 x 0.2 cm AIRLINE Inductor
L3 — 1.2 x 0.6 cm Brass Pad
L4 — 1.2 x 0.6 cm Brass Pad and
L4 — 2.0 x 0.2 cm AIRLINE Inductor
Board — G10, εr = 5, t = 62 mils
Board — 2 sided, 2 oz. Clad
Connectors: Type N
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