Motorola MRF20030 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common–emitter class A and class AB
amplifier applications. Suitable for frequency modulated, amplitude modulated
and multi–carrier base station RF power amplifiers.
• Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion — –28 dBc
• Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 10.5 dB
Efficiency — 40%
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP)
Output Power
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Designed for FM, TDMA, CDMA, and Multi–Carrier Applications
Order this document
by MRF20030/D
30 W, 2.0 GHz
NPN SILICON
BROADBAND
RF POWER TRANSISTOR
CASE 395D–03, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Collector–Base Voltage V
Collector–Emitter Voltage (RBE = 100 Ω) V
Emitter–Base Voltage V
Collector Current – Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case
(1) Thermal resistance is determined under specified RF operating condition.
ELECTRICAL CHARACTERISTICS (T
Characteristic
(1)
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
CEO
CES
CBO
CER
EB
C
P
D
stg
J
R
θJC
25 26 — Vdc
60 70 — Vdc
60 70 — Vdc
25 Vdc
60 Vdc
60 Vdc
30 Vdc
–3 Vdc
4 Adc
125
0.71
– 65 to +150 °C
200 °C
1.4 °C/W
Watts
W/°C
REV 1
Motorola, Inc. 1997
MRF20030MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Emitter–Base Breakdown Voltage
(IB = 5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(VCE = 5 Vdc, ICE = 1 Adc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
(1)
FUNCTIONAL TESTS (In Motorola T est Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Input Return Loss
(VCC = 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Load Mismatch
(VCC = 26 Vdc, P
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
Input Return Loss
(VCC = 26 Vdc, P
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
= 30 Watts, ICQ = 120 mA,
out
= 30 Watts (PEP), ICQ = 120 mA,
out
= 30 Watts (PEP), ICQ = 120 mA,
out
= 30 Watts (PEP), ICQ = 125 mA,
out
= 30 Watts (PEP), ICQ = 120 mA,
out
= 30 Watts (PEP), ICQ = 125 mA,
out
= 30 Watts (PEP), ICQ = 125 mA,
out
= 30 Watts (PEP), ICQ = 125 mA,
out
= 30 Watts (PEP), ICQ = 125 mA,
out
GUARANTEED BUT NOT TESTED (In Motorola T est Fixture)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
Collector Efficiency
(VCC = 26 Vdc, P
Input Return Loss
(VCC = 26 Vdc, P
Output Mismatch Stress
(VCC = 25 Vdc, P
f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test)
(1) For Information Only. This Part Is Collector Matched.
= 30 Watts, ICQ = 125 mA, f = 1880 MHz)
out
= 30 Watts , ICQ = 125 mA, f = 1880 MHz)
out
= 30 Watts , ICQ = 125 mA, f = 1880 MHz)
out
= 30 Watts, ICQ = 125 mA,
out
Symbol Min Typ Max Unit
V
(BR)EBO
I
CES
h
FE
C
ob
G
pe
η 34 38 — %
IMD — –33 –28 dBc
IRL 10 17 — dB
ψ
G
pe
η — 34 — %
IMD — –35 — dBc
IRL — 14 — dB
G
pe
η — 40 — %
IRL — 14 — dB
ψ
3 3.8 — Vdc
— — 10 mAdc
20 40 80 —
— 28 — pF
9.8 10.5 — dB
No Degradation in Output Power
— 10.5 — dB
— 10.5 — dB
Typically No Degradation in Output Power
MRF20030
2
MOTOROLA RF DEVICE DATA
V
BB
R1
B1, B2 Ferrite Bead, P/N 5659065/3B, Ferroxcube
C1, C13 0.1 µF, Chip Capacitor, Kermet
C2 100 µF, 50 V, Electrolytic Capacitor, Mallory
C3, C5, C12 0.6–4 pF, Variable Capacitor, Johanson, Gigatrim
C4, C11 10 pF, B Case Chip Capacitor, ATC
C6, C8 24 pF, B Case Chip Capacitor, ATC
C7, C9 75 pF, B Case Chip Capacitor, ATC
C10 0.4–2.5 pF, Variable Capacitor, Johanson, Gigatrim
C14 470 µF, 63 V, Electrolytic Capacitor, Mallory
D1 Diode, Motorola (MUR3160T3)
L1, L4 12 Turns, 22 AWG, IDIA. 0.195″
L2, L3 0.750″ 20 AWG
D1
Q1
R2
Q2
R3
INPUT
RF
L1
+
C1 C2
R4
Z1 Z2 Z3 Z4
C3 C5
R5
C4
B1
R6
L2
C6
C7
L4
B2
C8
R8
C9
R7
L4
Z5 Z6 Z7
DUT
N1, N2 Type N Flange Mount RF Connector
R1, R2 130 Ω, 1/8 W Chip Resistor, Rohm
R3, R4 100 Ω, 1/8 W Chip Resistor, Rohm
R5, R8 10 Ω, 1/2 W Resistor
R6, R7 10 Ω, 1/8 W Chip Resistor, Rohm (10J)
Q1 Transistor, PNP Motorola (BD136)
Q2 Transistor, NPN Motorola (MJD47)
Board 30 Mil Glass Teflon, Arlon GX–0300–55–22,
C10
MA/COM 3052–1648–10
εr = 2.55
C11
C13 C14
Z8
C12
V
CC
+
RF
OUT
Figure 1. Class AB T est Fixture Electrical Schematic
MRF20030MOTOROLA RF DEVICE DATA
3
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