Motorola MRF1946A, MRF1946 Datasheet
1
MRF1946 MRF1946AMOTOROLA RF DEVICE DATA
The RF Line
. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.
• High Common Emitter Power Gain
• Specified 12.5 V, 175 MHz Performance
Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%
• Diffused Emitter Resistor Ballasting
• Characterized to 220 MHz
• Load Mismatch at High Line and Overdrive Conditions
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
16 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
8.0 Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
100
0.57
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.75 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
V
(BR)CEO
16 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
V
(BR)CES
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
I
CES
— — 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
h
FE
40 75 150 —
(continued)
Order this document
by MRF1946/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 136–220 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
MRF1946
CASE 145A–09, STYLE 1
MRF1946A
Motorola, Inc. 1994
REV 6
MRF1946 MRF1946A
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 75 100 pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
out
= 30 W, f = 175 MHz)
G
pe
10 11 — dB
Collector Efficiency
(VCC = 12.5 Vdc, P
out
= 30 W, f = 175 MHz)
η 60 70 — %
Load Mismatch
(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)
ψ
No Degradation in Power Output
Figure 1. Broadband Test Circuit Schematic
C1 — 56 pF Mini–Unelco, 3HS0006–56
C2 — 47 pF Mini–Unelco, 3HS0006–47
C3, C4 — 180 pF Chip Cap, ATC 100B181JC500
C5 — 150 pF Unelco, J101–150
C6 — 39 pF Mini–Unelco, 3HS0006–39
C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50
C9 — 0.1 µF Ceramic Capacitor
C10 — 10 µF, 25 V Electrolytic Capacitor
C11 — 56 pF Mini–Unelco, 3HS0006–56
L1 — 2 Turns #18 AWG, 0.125″ ID
L2, L3 — Circuit Board and Mounting Pad Inductance
L4 — 3 Turns #18 AWG, 0.125″ ID
L5 — 6 Turns #16 Enameled, 0.250″ ID
RFC1 — 0.15 µH Molded Choke w/Ferrite Bead
RFC2 — Ferrite Choke, Fair Rite VK200–4B
Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating
Bead — Ferroxcube
RFC1
DUT
+12.5
Vdc
C1
C10
B
L1 L2
C2 C3
C4
RFC2L5
L3 L4
C6
C7
C5C11
C8 C9
+
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