Motorola MRF1946A, MRF1946 Datasheet

1

MRF1946 MRF1946AMOTOROLA RF DEVICE DATA

The RF Line

 
 

. . . designed for 12.5 volt large–signal power amplifiers in commercial and
industrial equipment.

• High Common Emitter Power Gain

• Specified 12.5 V, 175 MHz Performance

Output Power = 30 Watts
Power Gain = 10 dB
Efficiency = 60%

• Diffused Emitter Resistor Ballasting

• Characterized to 220 MHz

• Load Mismatch at High Line and Overdrive Conditions

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

8.0 Adc

Total Device Dissipation @ TA = 25°C

Derate above 25°C

P

D

100

0.57

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.75 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 5.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 1.0 Adc, VCE = 5.0 Vdc)

h

FE

40 75 150 —

(continued)

Order this document

by MRF1946/D



SEMICONDUCTOR TECHNICAL DATA





30 W, 136–220 MHz

RF POWER

TRANSISTORS

NPN SILICON

CASE 211–07, STYLE 1

MRF1946

CASE 145A–09, STYLE 1

MRF1946A

 Motorola, Inc. 1994

REV 6

MRF1946 MRF1946A
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 75 100 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

out

= 30 W, f = 175 MHz)

G

pe

10 11 — dB

Collector Efficiency

(VCC = 12.5 Vdc, P

out

= 30 W, f = 175 MHz)

η 60 70 — %

Load Mismatch

(VCC = 15.5 Vdc, Pin = 2.0 dB Overdrive,
Load VSWR = 30:1)

ψ

No Degradation in Power Output

Figure 1. Broadband Test Circuit Schematic

C1 — 56 pF Mini–Unelco, 3HS0006–56
C2 — 47 pF Mini–Unelco, 3HS0006–47
C3, C4 — 180 pF Chip Cap, ATC 100B181JC500
C5 — 150 pF Unelco, J101–150
C6 — 39 pF Mini–Unelco, 3HS0006–39
C7, C8 — 1000 pF Chip Cap, ATC 100B102JC50
C9 — 0.1 µF Ceramic Capacitor
C10 — 10 µF, 25 V Electrolytic Capacitor
C11 — 56 pF Mini–Unelco, 3HS0006–56

L1 — 2 Turns #18 AWG, 0.125″ ID
L2, L3 — Circuit Board and Mounting Pad Inductance
L4 — 3 Turns #18 AWG, 0.125″ ID
L5 — 6 Turns #16 Enameled, 0.250″ ID

RFC1 — 0.15 µH Molded Choke w/Ferrite Bead
RFC2 — Ferrite Choke, Fair Rite VK200–4B

Board Material — 1/32, Glass Teflon, 1 oz. Cu Plating
Bead — Ferroxcube

RFC1

DUT

+12.5

Vdc

C1

C10

B

L1 L2

C2 C3

C4

RFC2L5

L3 L4

C6

C7

C5C11

C8 C9

+