Motorola MRF184S, MRF184 Datasheet



SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF184/D

The RF MOSFET Line

   

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications at frequen­cies to 1.0 GHz. The high gain and broadband performance of these devices
makes them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.

• Guaranteed Performance @ 945 MHz, 28 Volts

Output Power = 60 Watts
Power Gain = 1 1.5 dB
Efficiency = 53%

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• Capable of Handling 30:1 VSWR @ 28 Vdc,

945 MHz

G

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 70°C

Derate above 70°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

D

S

DSS

GS

D

P

D

stg

J

θJC





60 W, 1.0 GHz

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 360B–01, STYLE 1

(MRF184)

CASE 360C–03, STYLE 1

(MRF184S)

65 Vdc

±20 Vdc

7 Adc

118

0.9

– 65 to +150 °C

200 °C

1.1 °C/W

Watts

W/°C

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 1 mAdc)
Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)
Gate–Source Leakage Current

(VGS = 20 V, VDS = 0 V)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 2

 Motorola, Inc. 1997

V

(BR)DSS

I

DSS

I

GSS

65 – – Vdc

– – 1 µAdc

– – 1 µAdc

MRF184 MRF184SMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS – continued (T

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage

(VDS = 28 V, ID = 100 mA)
Drain–Source On–Voltage

(VGS = 10 V, ID = 3 A)
Forward Transconductance

(VDS = 10 V, ID = 3 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 V, P
Drain Efficiency

(VDD = 28 V, P
Load Mismatch

(VDD = 28 V, P

Load VSWR 5:1 at all Phase Angles)

= 60 W, f = 945 MHz, IDQ = 100 mA)

out

= 60 W, f = 945 MHz, IDQ = 100 mA)

out

= 60 W, IDQ = 100 mA, f = 945 MHz,

out

= 25°C unless otherwise noted)

C

V

GS(th)

V

GS(Q)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 53 60 – %

ψ

2 3 4 Vdc

3 4 5 Vdc

– 0.65 0.8 Vdc

2.2 2.6 – s

– 83 – pF

– 44 – pF

– 4.3 – pF

11.5 15 – dB

No Degradation in Output Power

V

GG

RF

INPUT

C1

TL1

B1 Short RF Bead Fair Rite–2743019447
C1 18 pF Chip Capacitor
C2, C3, C6, C9 43 pF Chip Capacitor
C4 100 pF Chip Capacitor
C5, C12 10 µF, 50 Vdc Electrolytic Capacitor
C7, C10 1000 pF Chip Capacitor
C8, C11 0.1 µF, 50 Vdc Chip Capacitor
C13 250 µF , 50 Vdc Electrolytic Capacitor

R1

R2

C5

TL2

C6 C7

R3

DUT

C8

R4

C11

C9

C2

TL3

C3

L1 5 Turns, 20 AWG, IDIA 0.126″
R1 10 kΩ, 1/4 W Resistor
R2 13 kΩ, 1/4 W Resistor
R3 1.0 kΩ, 1/4 W Chip Resistor
R4 4 x 39 Ω, 1/8 W Chip Resistor
TL1–TL4 Microstrip Line See Photomaster
Ckt Board 1/32″ Glass Teflon, εr = 2.55

B1

L1

C10

ARLON–GX–0300–55–22

C4

C12

TL4

C13

V

DD

RF
OUTPUT

MRF184 MRF184S
2

Figure 1. MRF184 T est Circuit Schematic

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

–20

–30

–40

–50

–60

–70

IMD, INTERMODULATION DISTORTION (dBc)

–80

0 203040 60

10 50

P

, OUTPUT POWER (WATTS PEP)

out

3rd ORDER

VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
IDQ = 400 mA

Figure 2. Intermodulation Distortion versus

Output Power

18

IDQ = 600 mA

16

, POWER GAIN (dB)

14

pe

G

12

1 10 100

250 mA

100 mA

400 mA

P

, OUTPUT POWER (WATTS)

out

VDD = 28 Vdc
f = 945 MHz

Figure 4. Power Gain versus Output Power

5th

7th

70

–15

–25

IDQ = 100 mA

–35

250 mA

600 mA

–45

400 mA

IMD, INTERMODULATION DISTORTION (dBc)

–55

0.1 1 10 100
P

, OUTPUT POWER (WATTS PEP)

out

VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz

Figure 3. Intermodulation Distortion versus

Output Power

80
70

60
50
40
30

, OUTPUT POWER (WATTS)

20

out

P

10

0

012 3

G

pe

P

out

VDS = 28 Vdc
IDQ = 400 mA
f = 945 MHz

0.5 1.5 2.5
P

, INPUT POWER (WATTS)

in

16

15

, POWER GAIN (dB)

pe

G

14

Figure 5. Output Power versus Input Power

100

90
80
70
60
50
40
30

, OUTPUT POWER (WATTS)

out

20

P

10

0

12 16 20 32

14 18 28

VDD, SUPPLY VOLT AGE (VOLTS)

24 30

22 26

Pin = 4.0 W

IDQ = 400 mA
f = 945 MHz

Figure 6. Output Power versus Supply Voltage

2.0 W

1.0 W

80
70
60
50
40
30

, OUTPUT POWER (WATTS)

20

out

P

10

0

TYPICAL DEVICE SHOWN

VDS = 28 Vdc
Pin = 2.0 W
f = 945 MHz

1.5

0 0.5 1 5

VGS, GATE–SOURCE VOLTAGE (VOLTS)

2 3.5

2.5 3 4 4.5

Figure 7. Output Power versus Gate Voltage

MRF184 MRF184SMOTOROLA RF DEVICE DATA

3