Motorola MRF183S, MRF183 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Order this document
by MRF183/D
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
makes ithem ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 1 1.5 dB
Efficiency – 33%
IMD – 28 dBc
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• 100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1 Meg Ohm) V
Gate–Source Voltage V
Drain Current – Continuous I
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
G
D
S
DSS
DGR
GS
D
P
D
stg
J
θJC
45 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF183)
CASE 360C–03, STYLE 1
(MRF183S)
65 Vdc
65 Vdc
±20 Vdc
5 Adc
86
0.67
– 65 to +200 °C
200 °C
1.5 °C/W
W
W/°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 1997
MRF183 MRF183SMOTOROLA RF DEVICE DATA
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ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mAdc)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mAdc)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 Vdc, ID = 5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
= 25°C unless otherwise noted)
C
BV
I
I
V
GS(Q)
V
DS(on)
C
DSS
DSS
GSS
g
fs
C
iss
oss
C
rss
65 – – Vdc
– – 1 µAdc
– – 1 µAdc
3 – 5 Vdc
– 0.7 – Vdc
– 2 – S
– 82 – pF
– 38 – pF
– 4.5 – pF
FUNCTIONAL TESTS (In Motorola T est Fixture)
(VDD = 28 Vdc, P
Two–Tone Common Source Amplifier Power Gain G
Two–Tone Drain Efficiency η 33 36 – %
3rd Order Intermodulation Distortion IMD – –32 –28 dBc
Input Return Loss IRL 9 14 – dB
(VDD = 28 Vdc, P
Two–Tone Common Source Amplifier Power Gain G
Two–Tone Drain Efficiency η – 35 – %
3rd Order Intermodulation Distortion IMD – –32 – dBc
Input Return Loss IRL – 12 – dB
Output Mismatch Stress
(VDD = 28 Vdc, P
f = 945 MHz, VSWR 5:1 at All Phase Angles)
= 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA)
out
ps
= 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA)
out
ps
= 45 Watts CW, IDQ = 250 mA,
out
Ψ
11.5 13 – dB
– 13 – dB
No Degradation in Output Power
Before and After Test
MRF183 MRF183S
2
MOTOROLA RF DEVICE DATA
V
GG
R1
+ +
C1
R2
R3
B1
C2 C3 C4
L1
L2
B2
C13
C14 C15 C16
V
DD
RF
INPUT
C5
Z2Z1
C6
B1 Short Ferrite Bead
B2 Long Ferrite Bead
C1 10 µF, 50 V Electrolytic Capacitor
C2, C14 0.1 µF Chip Capacitor
C3 1000 pF Chip Capacitor
C4, C13 47 pf Chip Capacitor
C5, C12 47 pF Chip Capacitor
C6, C11 0.8–8.0 pF Trim Capacitor
C7, C8 10 pF Chip Capacitor
C9, C10 10 pF Chip Capacitor
C15 100 pF Chip Capacitor
C16 250 µF, 50 V Electrolytic Capacitor
L1, L2 5 Turns, 24 AWG, ID 0.059″
R1 120 Ω, 1/4 W Carbon
R2 18 kΩ, 1/4 W Carbon
C8
Z5Z4Z3
C7
Figure 1. MRF183S T wo Tone Test Circuit Schematic
Z6
DUT
R3 4.7 MΩ, 1/4 W Carbon
Z1 T–Line, 0.200″ x 0.080″
Z2 T–Line, 0.570″ x 0.120″
Z3 T–Line, 0.610″ x 0.320″
Z4 T–Line, 0.160″ x 0.320″ x 0.620″
Z5 T–Line, 0.650″ x 0.620″
Z6 T–Line, 0.020″ x 0.620″
Z7 T–Line, 0.270″ x 0.320″
Z8 T–Line, 0.130″ x 0.320″
Z9 T–Line, 0.370″ x 0.080″
Z10 T–Line, 1.050″ x 0.080″
Z11 T–Line, 0.290″ x 0.080″
Board 0.030″ Glass Teflon, εr = 2.55
Z7
C9
Z8 Z9
C10
Tapered Line
ARLON–GX–0300–55–22
C11
Z10
C12
RF
OUTPUT
Z11
MRF183 MRF183SMOTOROLA RF DEVICE DATA
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