Motorola MRF182 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Order this document
by MRF182/D
N–Channel Enhancement–Mode Lateral
MOSFETs
• High Gain, Rugged Device
• Broadband Performance from HF to 1 GHz
• Bottom Side Source Eliminates DC Isolators, Reducing Common
Mode Inductances
D
G
S
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage V
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
DSS
GS
P
D
stg
J
θJC
30 W, 1.0 GHz
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–01, STYLE 1
(MRF182)
CASE 360C–03, STYLE 1
(MRF182S)
65 Vdc
±20 Vdc
74
0.57
– 65 to +150 °C
200 °C
1.75 °C/W
W
W/°C
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 1.0 mAdc)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
V
(BR)DSS
I
DSS
I
GSS
65 – – Vdc
– – 1 µAdc
– – 1 µAdc
Motorola, Inc. 1997
MRF182MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS – continued (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 100 µA)
Gate Quiescent Voltage
(VDS = 28 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
Forward Transconductance
(VDS = 10 V, ID = 3 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, P
Drain Efficiency
(VDD = 28 Vdc, P
Load Mismatch
(VDD = 28 Vdc, P
Load VSWR 5:1 at All Phase Angles)
Series Equivalent Input Impedance
(VDD = 28 Vdc, P
Series Equivalent Output Impedance
(VDD = 28 Vdc, P
= 30 W, IDQ = 50 mA, f = 945 MHz)
out
= 30 W, IDQ = 50 mA, f = 945 MHz)
out
= 30 W, IDQ = 50 mA, f = 945 MHz,
out
= 30 W, IDQ = 50 mA, f = 960 MHz)
out
= 30 W, IDQ = 50 mA, f = 960 MHz)
out
= 25°C unless otherwise noted)
C
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
η 50 60 – %
Ψ No Degradation in Output Power
Z
in
Z
out
2 3 4 Vdc
3 4 5 Vdc
– 0.9 1.2 Vdc
1.6 1.8 – S
– 56 – pF
– 28 – pF
– 2.5 – pF
11 14 – dB
– 0.81 + j1.6 – ohms
– 2.15 – j1.7 – ohms
MRF182
2
MOTOROLA RF DEVICE DATA
L1
R4
B1
C10
C11
C12
C13
V
DD
V
GG
R1
R2
C5
C6 C7
R3
C8
C9
C2
RF
INPUT
C1
TL1
B1 Short RF Bead Fair Rite–274301944
C1 18 pF Chip Capacitor
C2, C3, C6, C9 43 pF Chip Capacitor
C4 100 pF Chip Capacitor
C5, C12 10 µF, 50 Vdc Electrolytic Capacitor
C7, C10 1000 pF Chip Capacitor
C8, C11 0.1 µF, 50 Vdc Chip Capacitor
C13 250 µF, 50 Vdc Electrolytic Capacitor
C14 0.6–4.5 pF Variable Capacitor
DUT
TL2
Figure 1. MRF182 Schematic
TL3
C3
L1 5 Turns, 20 AWG, IDIA 0.126
R1 10 kΩ, 1/4 W Resistor
R2 13 kΩ, 1/4 W Resistor
R3 1.0 kΩ, 1/4 W Chip Resistor
R4 4 x 39 Ω, 1/8 W Chip Resistor
″TL1–TL4 Microstrip Line See Photomaster
Ckt Board 1/32″ Glass Teflon, εr = 2.55
C14
ARLON–GX–0300–55–22
C4
TL4
RF
OUTPUT
MRF182MOTOROLA RF DEVICE DATA
3
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