Motorola MRF177 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Order this document
by MRF177/D
N–Channel Enhancement Mode MOSFET
Designed for broadband commercial and military applications up to 400 MHz
frequency range. Primarily used as a driver or output amplifier in push–pull
configurations. Can be used in manual gain control, ALC and modulation
circuits.
• Typical Performance at 400 MHz, 28 V:
Output Power — 100 W
Gain — 12 dB
Efficiency — 60%
• Low Thermal Resistance
• Low C
— 10 pF Typ @ VDS = 28 Volts
rss
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Excellent Thermal Stability; Suited for Class A
Operation
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
6
5, 8
7
2
1, 4
3
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 744A–01, STYLE 2
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
Operating Temperature Range T
DSS
DGR
GS
D
P
D
stg
J
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction–to–Case R
(1) Total device dissipation rating applies only when the device is operated as an RF push–pull amplifier.
NOTE — CAUTION
packaging MOS devices should be observed.
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
θJC
65 Vdc
65 Vdc
±40 Vdc
16 Adc
270
1.54
–65 to +150 °C
200 °C
0.65 °C/W
Watts
W/°C
REV 8
Motorola, Inc. 1997
MRF177MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic (1) Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = 10 V, ID = 50 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 3.0 A)
Forward Transconductance
(VDS = 10 V, ID = 2.0 A)
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
= 25°C unless otherwise noted)
C
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
65 — — Vdc
— — 2.0 mAdc
— — 1.0 µAdc
1.0 3.0 6.0 Vdc
— — 1.4 Vdc
1.8 2.2 — mhos
— 100 — pF
— 105 — pF
— 10 — pF
FUNCTIONAL CHARACTERISTICS (Figure 8) (2)
Common Source Power Gain
(VDD = 28 Vdc, P
Drain Efficiency
(VDD = 28 Vdc, P
Electrical Ruggedness
(VDD = 28 Vdc, P
Load VSWR = 30:1, All Phase Angles At Frequency of Test)
(1) Note each transistor chip measured separately
(2) Both transistor chips operating in push–pull amplifier
= 100 W, f = 400 MHz, IDQ = 200 mA)
out
= 100 W, f = 400 MHz, IDQ = 200 mA)
out
= 100 W, f = 400 MHz, IDQ = 200 mA,
out
G
PS
η 55 60 — %
ψ No Degradation
10 12 — dB
in Output Power
Before & After Test
MRF177
2
MOTOROLA RF DEVICE DATA
Loading...