Motorola MRF176GV, MRF176GU Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.

• Electrical Performance

MRF176GU @ 50 V, 400 MHz (“U” Suffix)

Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ

MRF176GV @ 50 V, 225 MHz (“V” Suffix)

Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ

D

• 100% Ruggedness Tested At Rated Output Power

• Low Thermal Resistance

• Low C

— 7.0 pF Typ @ VDS = 50 V

rss

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

G
G

D

S

(FLANGE)

DSS

GS

D

P

D

stg

J

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

200/150 W, 50 V, 500 MHz

N–CHANNEL MOS

BROADBAND

RF POWER FETs

CASE 375–04, STYLE 2

125 Vdc
±40 Vdc

16 Adc

400

2.27

–65 to +150 °C

200 °C

0.44 °C/W

Watts

W/°C

ELECTRICAL CHARACTERISTICS (T

Characteristic

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current

(VDS = 50 V, VGS = 0)
Gate–Body Leakage Current

(VGS = 20 V, VDS = 0)

NOTE:

1. Each side of device measured separately.

REV 8

 Motorola, Inc. 1995

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

V

(BR)DSS

I

DSS

I

GSS

125 — — Vdc

— — 2.5 mAdc

— — 1.0 µAdc

MRF176GU MRF176GVMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL CHARACTERISTICS — MRF176GV (2) (Figure 1)

Common Source Power Gain

(VDD = 50 Vdc, P
Drain Efficiency

(VDD = 50 Vdc, P
Electrical Ruggedness

(VDD = 50 Vdc, P

VSWR 10:1 at all Phase Angles)

NOTES:

1. Each side of device measured separately.

2. Measured in push–pull configuration.

= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)

out

= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)

out

= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,

out

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

η 50 55 — %

ψ

1.0 3.0 6.0 Vdc

1.0 3.0 5.0 Vdc

2.0 3.0 — mhos

— 180 — pF
— 100 — pF
— 6.0 — pF

15 17 — dB

No Degradation in Output Power

R1

BIAS 0–6 V

C3 C4

R2

T1

C1 C2

C1 — Arco 404, 8.0–60 pF
C2, C3, C6, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C7 — Arco 403, 3.0–35 pF
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enameled Wire,

L1 — Close Wound, 1/4″ I.D.

Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, εr ^ 5

Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent

C5

D.U.T.

C9C8

T2

C6

L2 — Ferrite Beads of Suitable Material

L2 — for 1.5–2.0 µH, Total Inductance

R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhms, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.

T1 — Can Be Made of 25 Ohm Semirigid
T1 — Co–Ax, 47–62 Mils O.D.

T2 — 1:4 Impedance Ratio RF Transformer.

T2 — Can Be Made of 25 Ohm Semirigid
T2 — Co–Ax, 62–90 Mils O.D.

NOTE: For stability, the input transformer T1 should be loaded

NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.

C10

C7

+

50 V

–

MRF176GU MRF176GV
2

Figure 1. 225 MHz Test Circuit

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

(TC = 25°C unless otherwise noted)

FUNCTIONAL CHARACTERISTICS — MRF176GU (1) (Figure 2)

Common Source Power Gain

(VDD = 50 Vdc, P
Drain Efficiency

(VDD = 50 Vdc, P
Electrical Ruggedness

(VDD = 50 Vdc, P

VSWR 10:1 at all Phase Angles)

NOTE:

1. Measured in push–pull configuration.

= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)

out

= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)

out

= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,

out

G

ps

η 45 50 — %

ψ

12 14 — dB

No Degradation in Output Power

AB

BIAS

C11 C12

C1

B1

C2

B1 — Balun, 50 Ω Semirigid Coax .086 OD 2″ Long
B2 — Balun, 50 Ω Semirigid Coax .141 OD 2″ Long
C1, C2, C9, C10 — 270 pF ATC Chip Capacitor
C3 — 15 pF ATC Chip Cap
C4, C8 — 1.0–20 pF Piston Trimmer Cap
C5 — 27 pF ATC Chip Cap
C6, C7 — 22 pF Mini Unelco Capacitor
C11, C13, C14, C15, C16 — 0.01 µF Ceramic Capacitor
C12 — 1.0 µF 50 V Tantalum Cap
C17, C18 — 680 pF Feedthru Capacitor
C19 — 10 µF 100 V Tantalum Cap
L1, L2 — Hairpin Inductor #18 W
L3, L4 — Hairpin Inductor #18 W

Ckt Board Material — .060″ teflon–fiberglass, copper clad both sides, 2 oz. copper,

εr = 2.55

R1

L1

C3

L2

C13 C15

Z1

C4

Z2

AB

.200

.200

R2

D.U.T.

R3

C14 C16

.400

.200

″

″

″

C17

C5

L6

L7

C18

Z3

C6
C7

Z4

L5, L6 — 13T #18 W .250 ID
L7 — Ferroxcube VK–200 20/4B
L8 — 3T #18 W .340 ID
R1 — 1.0 kΩ 1/4 W Resistor
R2, R3 — 10 kΩ 1/4 W Resistor
Z1, Z2 — Microstrip Line .400L x .250W
Z3, Z4 — Microstrip Line .450L x .250W

C8

L8

C19

C9

L3

C10

L4

50 V

B2

Figure 2. 400 MHz Test Circuit

MRF176GU MRF176GVMOTOROLA RF DEVICE DATA

3