Motorola MRF175LV, MRF175LU Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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by MRF175LU/D

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N–Channel Enhancement–Mode

Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.

• Guaranteed Performance

MRF175LU @ 28 V, 400 MHz (“U” Suffix)

Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ

MRF175LV @ 28 V, 225 MHz (“V” Suffix)

Output Power — 100 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ

• 100% Ruggedness Tested At Rated Output Power

• Low Thermal Resistance

• Low C

— 20 pF Typ @ VDS = 28 V

rss

G

D

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100 W, 28 V, 400 MHz

N–CHANNEL

BROADBAND

RF POWER FETs

S

CASE 333–04, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

GS

D

P

D

stg

J

65 Vdc

±40 Vdc

13 Adc

270

1.54

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

θJC

0.65 °C/W

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)
Gate–Body Leakage Current

(VGS = 20 V, VDS = 0)

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

V

(BR)DSS

I

DSS

I

GSS

65 — — Vdc

— — 2.5 mAdc

— — 1.0 µAdc

(continued)

REV 8

 Motorola, Inc. 1997

MRF175LU MRF175L VMOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL CHARACTERISTICS — MRF175LV (Figure 1)

Common Source Power Gain

(VDD = 28 Vdc, P
Drain Efficiency

(VDD = 28 Vdc, P
Electrical Ruggedness

(VDD = 28 Vdc, P

VSWR 30:1 at all Phase Angles)

= 100 W, f = 225 MHz, IDQ = 100 mA)

out

= 100 W, f = 225 MHz, IDQ = 100 mA)

out

= 100 W, f = 225 MHz, IDQ = 100 mA,

out

FUNCTIONAL CHARACTERISTICS — MRF175LU (Figure 2)

Common Source Power Gain

(VDD = 28 Vdc, P
Drain Efficiency

(VDD = 28 Vdc, P
Electrical Ruggedness

(VDD = 28 Vdc, P

VSWR 30:1 at all Phase Angles)

= 100 W, f = 400 MHz, IDQ = 100 mA)

out

= 100 W, f = 400 MHz, IDQ = 100 mA)

out

= 100 W, f = 400 MHz, IDQ = 100 mA,

out

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

η 55 65 — %

ψ

G

ps

η 50 55 — %

ψ

1.0 3.0 6.0 Vdc

0.1 0.9 1.5 Vdc

2.0 3.0 — mhos

— 180 — pF
— 200 — pF
— 20 — pF

12 14 — dB

No Degradation in Output Power

8.0 10 — dB

No Degradation in Output Power

BIAS

RF INPUT

C1, C2, C8 — Arco 463 or Equivalent
C3, C7 — 25 pF Unelco Cap
C4 — 1000 pF Chip Cap
C5 — 0.01 µF Chip Cap
C6 — 250 pF Unelco Cap
C9 — Arco 462 or Equivalent
C10 — 1000 pF ATC Chip Cap
C11 — 10 µF 100 V Electrolytic

R1

C4

C1

C2 C3 C6 C7

RFC1

C5 C10 C11

R2

L1

L1 — Hairpin Inductor #18 Wire

L2 — Stripline Inductor 0.200″ x 0.500″

0.15

″

L4

D.U.T.

0.32

L3L2

″

Figure 1. 225 MHz Test Circuit

+28 Vdc

C9

RF OUTPUT

C8

L3 — Hairpin Inductor #16 Wire

0.45

″

0.2

″

L4 — 2 Turns #16 Wire 5/16″ ID
RFC1 — VK200–4B
R1 — 1.0 k 1/4 W Resistor
R2 — 100 Ω Resistor

MRF175LU MRF175L V
2

MOTOROLA RF DEVICE DATA

BIAS

C11 C13

C12

L3

C14

+ v

C9

m

f

.01

IN

C1, C8 — 270 pF ATC Chip Cap
C2, C4, C6, C7 — 1.0–20 pF Trimmer Cap
C3 — 15 pF Mini Unelco Cap
C5 — 33 pF Mini Unelco Cap
C9, C12 — 0.1 µF Ceramic Cap
C11, C14 — 680 pF Feed Thru Cap
C13 — 50 µF Tantalum Cap

C1

C2

R2

L1

C3

L2

R1

Z1

C4

L1 — Hairpin Inductor #18 Wire

L2 — 12 Turns #18 Wire 0.450″ ID
L3 — Ferroxcube VK200 20/4B

0.25

D.U.T.

″

Figure 2. 400 MHz T est Circuit

0.4

GND

Z2

R1 — 10 k 1/4 W Resistor
R2 — 1 k 1/4 W Resistor
R3 — 1.5 k 1/4 W Resistor
Z1 — Microstrip Line 0.950″ x 0.250″
Z2 — Microstrip Line 1″ x 0.250″

″

Z3 — Microstrip Line 0.550″ x 0.250″
Board Material — 0.062″ Teflon —

fiberglass, εr = 2.56, 1 oz. copper
clad both sides

Z3

C7C6C5

C8

OUT

TYPICAL CHARACTERISTICS

4000

3000

2000

1000

, UNITY GAIN FREQUENCY (MHz)

T

f

0

0 2 4 6 8 1012141618 20

I

D

Figure 3. Common Source Unity Current Gain

Frequency versus Drain Current

VDS = 20 V

10 V

, DRAIN CURRENT (AMPS)

100

10

, DRAIN CURRENT (AMPS)

D

I

0

0 10 100

ID, DRAIN CURRENT (AMPS)

TC = 25°C

Figure 4. DC Safe Operating Area

MRF175LU MRF175L VMOTOROLA RF DEVICE DATA

3