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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
Order this document
by MRF175LU/D
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 400 MHz. The high power, high gain and
broadband performance of each device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 100 Watts
Power Gain — 10 dB Typ
Efficiency — 55% Typ
MRF175LV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 100 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low C
— 20 pF Typ @ VDS = 28 V
rss
G
D
100 W, 28 V, 400 MHz
N–CHANNEL
BROADBAND
RF POWER FETs
S
CASE 333–04, STYLE 2
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
DSS
GS
D
P
D
stg
J
65 Vdc
±40 Vdc
13 Adc
270
1.54
–65 to +150 °C
200 °C
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
θJC
0.65 °C/W
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate–Body Leakage Current
(VGS = 20 V, VDS = 0)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
V
(BR)DSS
I
DSS
I
GSS
65 — — Vdc
— — 2.5 mAdc
— — 1.0 µAdc
(continued)
REV 8
Motorola, Inc. 1997
MRF175LU MRF175L VMOTOROLA RF DEVICE DATA
1
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ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) V
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
FUNCTIONAL CHARACTERISTICS — MRF175LV (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, P
Drain Efficiency
(VDD = 28 Vdc, P
Electrical Ruggedness
(VDD = 28 Vdc, P
VSWR 30:1 at all Phase Angles)
= 100 W, f = 225 MHz, IDQ = 100 mA)
out
= 100 W, f = 225 MHz, IDQ = 100 mA)
out
= 100 W, f = 225 MHz, IDQ = 100 mA,
out
FUNCTIONAL CHARACTERISTICS — MRF175LU (Figure 2)
Common Source Power Gain
(VDD = 28 Vdc, P
Drain Efficiency
(VDD = 28 Vdc, P
Electrical Ruggedness
(VDD = 28 Vdc, P
VSWR 30:1 at all Phase Angles)
= 100 W, f = 400 MHz, IDQ = 100 mA)
out
= 100 W, f = 400 MHz, IDQ = 100 mA)
out
= 100 W, f = 400 MHz, IDQ = 100 mA,
out
GS(th)
DS(on)
fs
iss
oss
rss
G
ps
η 55 65 — %
ψ
G
ps
η 50 55 — %
ψ
1.0 3.0 6.0 Vdc
0.1 0.9 1.5 Vdc
2.0 3.0 — mhos
— 180 — pF
— 200 — pF
— 20 — pF
12 14 — dB
No Degradation in Output Power
8.0 10 — dB
No Degradation in Output Power
BIAS
RF INPUT
C1, C2, C8 — Arco 463 or Equivalent
C3, C7 — 25 pF Unelco Cap
C4 — 1000 pF Chip Cap
C5 — 0.01 µF Chip Cap
C6 — 250 pF Unelco Cap
C9 — Arco 462 or Equivalent
C10 — 1000 pF ATC Chip Cap
C11 — 10 µF 100 V Electrolytic
R1
C4
C1
C2 C3 C6 C7
RFC1
C5 C10 C11
R2
L1
L1 — Hairpin Inductor #18 Wire
L2 — Stripline Inductor 0.200″ x 0.500″
0.15
″
L4
D.U.T.
0.32
L3L2
″
Figure 1. 225 MHz Test Circuit
+28 Vdc
C9
RF OUTPUT
C8
L3 — Hairpin Inductor #16 Wire
0.45
″
0.2
″
L4 — 2 Turns #16 Wire 5/16″ ID
RFC1 — VK200–4B
R1 — 1.0 k 1/4 W Resistor
R2 — 100 Ω Resistor
MRF175LU MRF175L V
2
MOTOROLA RF DEVICE DATA
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BIAS
C11 C13
C12
L3
C14
+ v
C9
m
f
.01
IN
C1, C8 — 270 pF ATC Chip Cap
C2, C4, C6, C7 — 1.0–20 pF Trimmer Cap
C3 — 15 pF Mini Unelco Cap
C5 — 33 pF Mini Unelco Cap
C9, C12 — 0.1 µF Ceramic Cap
C11, C14 — 680 pF Feed Thru Cap
C13 — 50 µF Tantalum Cap
C1
C2
R2
L1
C3
L2
R1
Z1
C4
L1 — Hairpin Inductor #18 Wire
L2 — 12 Turns #18 Wire 0.450″ ID
L3 — Ferroxcube VK200 20/4B
0.25
D.U.T.
″
Figure 2. 400 MHz T est Circuit
0.4
GND
Z2
R1 — 10 k 1/4 W Resistor
R2 — 1 k 1/4 W Resistor
R3 — 1.5 k 1/4 W Resistor
Z1 — Microstrip Line 0.950″ x 0.250″
Z2 — Microstrip Line 1″ x 0.250″
″
Z3 — Microstrip Line 0.550″ x 0.250″
Board Material — 0.062″ Teflon —
fiberglass, εr = 2.56, 1 oz. copper
clad both sides
Z3
C7C6C5
C8
OUT
TYPICAL CHARACTERISTICS
4000
3000
2000
1000
, UNITY GAIN FREQUENCY (MHz)
T
f
0
0 2 4 6 8 1012141618 20
I
D
Figure 3. Common Source Unity Current Gain
Frequency versus Drain Current
VDS = 20 V
10 V
, DRAIN CURRENT (AMPS)
100
10
, DRAIN CURRENT (AMPS)
D
I
0
0 10 100
ID, DRAIN CURRENT (AMPS)
TC = 25°C
Figure 4. DC Safe Operating Area
MRF175LU MRF175L VMOTOROLA RF DEVICE DATA
3