Motorola MRF175GV, MRF175GU Datasheet
1
MRF175GU MRF175GVMOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
• Guaranteed Performance
MRF175GV @ 28 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 14 dB Typ
Efficiency — 65% Typ
MRF175GU @ 28 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 12 dB Typ
Efficiency — 55% Typ
• 100% Ruggedness Tested At Rated Output Power
• Low Thermal Resistance
• Low C
rss
— 20 pF Typ @ VDS = 28 V
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
65 Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
V
DGR
65 Vdc
Gate–Source Voltage V
GS
±40 Vdc
Drain Current — Continuous I
D
26 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
400
2.27
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
Operating Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
0.44 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 50 mA)
V
(BR)DSS
65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
I
DSS
— — 2.5 mAdc
Gate–Source Leakage Current
(VGS = 20 V, VDS = 0)
I
GSS
— — 1.0 µAdc
(continued)
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF175GU/D
SEMICONDUCTOR TECHNICAL DATA
200/150 WATTS, 28 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
CASE 375–04, STYLE 2
Motorola, Inc. 1995
D
G
S
(FLANGE)
D
G
REV 7
MRF175GU MRF175GV
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
GS(th)
1.0 3.0 6.0 Vdc
Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A) V
DS(on)
0.1 0.9 1.5 Vdc
Forward Transconductance (VDS = 10 V, ID = 2.5 A) g
fs
2.0 3.0 — mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
iss
— 180 — pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
oss
— 200 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
rss
— 20 — pF
FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)
Common Source Power Gain
(VDD = 28 Vdc, P
out
= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
G
ps
12 14 — dB
Drain Efficiency
(VDD = 28 Vdc, P
out
= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)
η 55 65 — %
Electrical Ruggedness
(VDD = 28 Vdc, P
out
= 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
Figure 1. 225 MHz Test Circuit
C1 — Arco 404, 8.0–60 pF
C2, C3, C7, C8 — 1000 pF Chip
C4, C9 — 0.1 µF Chip
C5 — 180 pF Chip
C6 — 100 pF and 130 pF Chips in Parallel
C10 — 0.47 µF Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enamel Wire, Close
L1 — Wound, 1/4″ I.D.
L2 — Ferrite Beads of Suitable Material for
L2 — 1.5–2.0 µH Total Inductance
Board material — .062″ fiberglass (G10),
Two sided, 1 oz. copper, εr ^ 5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent.
R1 — 100 Ohms, 1/2 W
R2 — 1.0 k Ohm, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid Coax,
T1 — 47–52 Mils O.D.
T2 — 1:9 Impedance Ratio RF Transformer.
T2 — Can Be Made of 15–18 Ohms Semirigid
T2 — Coax, 62–90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
BIAS 0–6 V
R1
C3 C4
R2
C1 C2
T1
C5
D.U.T.
C6
T2
C7
L1
C8 C9
L2
C10
+
–
28 V
3
MRF175GU MRF175GVMOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS — MRF175GU (1) (Figure 2)
Common Source Power Gain
(VDD = 28 Vdc, P
out
= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
G
ps
10 12 — dB
Drain Efficiency
(VDD = 28 Vdc, P
out
= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA)
η 50 55 — %
Electrical Ruggedness
(VDD = 28 Vdc, P
out
= 150 W, f = 400 MHz, IDQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
ψ
No Degradation in Output Power
NOTE:
1. Measured in push–pull configuration.
Figure 2. 400 MHz Test Circuit
B1 — Balun 50 Ω Semi Rigid Coax 0.086″ O.D. 2″ Long
B2 — Balun 50 Ω Semi Rigid Coax 0.141″ O.D. 2″ Long
C1, C2, C8, C9 — 270 pF ATC Chip Cap
C3, C5, C7 — 1.0–20 pF Trimmer Cap
C4 — 15 pF ATC Chip Cap
C6 — 33 pF ATC Chip Cap
C10, C12, C13, C16, C17 — 0.01 µF Ceramic Cap
C11 — 1.0 µF 50 V Tantalum
C14, C15 — 680 pF Feedthru Cap
C18 — 20 µF 50 V Tantalum
L1, L2 — Hairpin Inductor #18 Wire
L3, L4 — 12 Turns #18 Enameled Wire 0.340″ I.D.
L5 — Ferroxcube VK200 20/4B
L6 — 3 Turns #16 Enameled Wire 0.340″ I.D.
R1 — 1.0 kΩ 1/4 W Resistor
R2, R3 — 10 kΩ 1/4 W Resistor
Z1, Z2 — Microstrip Line 0.400″ x 0.250″
Z3, Z4 — Microstrip Line 0.870″ x 0.250″
Z5, Z6 — Microstrip Line 0.500″ x 0.250″
Board material — 0.060″ Teflon–fiberglass,
εr = 2.55, copper clad both sides, 2 oz. copper.
BIAS
C10 C11
R1
C12 C13
C14 C15
L5 L6
C18
28 V
B1
C3 C4
C5
C6
C7
B2
C2
L2
R3
L4
C16 C17
BA
Z2
Z1 Z3 Z5
Z4 Z6
0.180
″
0.200
″
A
B
D.U.T.
R2
L3
C9
C1
L1
C8
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