Motorola MRF174 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode

. . . designed primarily for wideband large–signal output and driver stages up to
200 MHz frequency range.

• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Minimum Gain = 9.0 dB
Efficiency = 50% (Min)

• Excellent Thermal Stability , Ideally Suited For Class A

Operation

• Facilitates Manual Gain Control, ALC and Modulation

Techniques

• 100% Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

• Low Noise Figure — 3.0 dB Typ at 2.0 A, 150 MHz

D

Order this document

by MRF174/D



125 W, to 200 MHz
N–CHANNEL MOS

BROADBAND RF POWER

FET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage

(RGS = 1.0 MΩ)
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

V

DSS

DGR

GS

D

P

D

stg

J

65 Vdc
65 Vdc

±40 Vdc

13 Adc

270

1.54

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.65 °C/W

REV 7

 Motorola, Inc. 1997

MRF174MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mA) V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) I
Gate–Source Leakage Current (VGS = 20 V, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Forward Transconductance (VDS = 10 V, ID = 3.0 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL CHARACTERISTICS (Figure 1)

Noise Figure

(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)
Common Source Power Gain

(VDD = 28 Vdc, P
Drain Efficiency

(VDD = 28 Vdc, P
Electrical Ruggedness

(VDD = 28 Vdc, P

VSWR 30:1 at all Phase Angles)

= 125 W, f = 150 MHz, IDQ = 100 mA)

out

= 125 W, f = 150 MHz, IDQ = 100 mA)

out

= 125 W, f = 150 MHz, IDQ = 100 mA,

out

(BR)DSS

DSS
GSS

GS(th)

fs

iss

oss

rss

NF — 3.0 — dB

G

ps

η 50 60 — %

ψ

65 — — Vdc
— — 10 mAdc
— — 1.0 µAdc

1.0 3.0 6.0 Vdc

1.75 2.5 — mhos

— 175 — pF
— 190 — pF
— 40 — pF

9.0 11.8 — dB

No Degradation in Output Power

BIAS

ADJUST

RF INPUT

R2

+

C9 C10

C
3

C2

C1 — 15 pF Unelco
C2 — Arco 462, 5.0–80 pF
C3 — 100 pF Unelco
C4 — 25 pF Unelco
C6 — 40 pF Unelco
C7 — Arco 461, 2.7–30 pF
C5, C8 — Arco 463, 9.0–180 pF
C9, C11, C14 — 0.1 µF Erie Redcap
C10 — 50 µF, 50 V
C12, C13 — 680 pF Feedthru
D1 — 1N5925A Motorola Zener

D1R3

–

L1 L2

C4

R4

C5

L4

C12

R1

C11

RFC1

L3

DUTC1

L1 — #16 AWG, 1–1/4 Turns, 0.213″ ID
L2 — #16 AWG, Hairpin

L3 — #14 AWG, Hairpin
L4 — 10 Turns #16 AWG Enameled Wire on R1

RFC1 — 18 Turns #16 AWG Enameled Wire, 0.3″ ID
R1 — 10 Ω, 2.0 W
R2 — 1.8 kΩ, 1/2 W
R3 — 10 kΩ, 10 Turn Bourns
R4 — 10 kΩ, 1/4 W

C6

C7

0.25

0.062

C13

″

″

C8

C14

0.47

0.2

+
VDD = 28 V
–

RF OUTPUT

″

″

MRF174
2

Figure 1. 150 MHz Test Circuit

MOTOROLA RF DEVICE DATA

140
120

100

80

60

40

, OUTPUT POWER (WATTS)

out

P

20

f = 100 MHz

150 MHz

200 MHz

VDD = 28 V
IDQ = 100 mA

80
70

60
50
40
30

, OUTPUT POWER (WATTS)

20

out

P

10

f = 100 MHz

VDD = 13.5 V
IDQ = 100 mA

150 MHz

200 MHz

0

0

2

4 6 8 10 12 14

Pin, INPUT POWER (WATTS)

0

0

46810121416

2

Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power

160
140
120
100

80
60

, OUTPUT POWER (WATTS)

40

out

P

20

0

12 2814 16 18 20 22 24 26

IDQ = 100 mA
f = 100 MHz

VDD, SUPPLY VOLT AGE (VOLTS)

Pin = 6 W

4 W

2 W

160
140
120
100

, OUTPUT POWER (WATTS)

out

P

IDQ = 100 mA
f = 150 MHz

80
60
40
20

0

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLT AGE (VOLTS)

Pin = 12 W

8 W

4 W

Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage

160
140
120
100

80
60

, OUTPUT POWER (WATTS)

40

out

P

20

IDQ = 100 mA
f = 200 MHz

Pin = 16 W

0

12 2814 16 18 20 22 24 26

VDD, SUPPLY VOLT AGE (VOLTS)

12 W

8 W

22
20
18
16
14
12
10

, POWER GAIN (dB)

8

PS

G

6
4
2

20

40 60 80 100 120 140 160 180 200 220

P

out

VDD = 28 V
IDQ = 100 mA

f, FREQUENCY (MHz)

Figure 6. Output Power versus Supply V oltage Figure 7. Power Gain versus Frequency

= 125 W

MRF174MOTOROLA RF DEVICE DATA

3