Motorola MRF173CQ, MRF173 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
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by MRF173/D
N–Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz
frequency range. The high–power, high–gain and broadband performance of
these devices make possible solid state transmitters for FM broadcast or TV
channel frequency bands.
• Guaranteed Performance at 150 MHz, 28 V:
Output Power = 80 W
Gain = 1 1 dB (13 dB Typ)
Efficiency = 55% Min. (60% T yp)
• Low Thermal Resistance
• Ruggedness Tested at Rated Output Power
• Nitride Passivated Die for Enhanced Reliability
• Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz
• Excellent Thermal Stability; Suited for Class A Operation
G
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Temperature Range T
DSS
DGO
GS
D
P
D
stg
J
65 Vdc
65 Vdc
±40 Vdc
9.0 Adc
220
1.26
–65 to +150 °C
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA V
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) I
Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) I
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) V
Drain–Source On–Voltage (V
Forward Transconductance (VDS = 10 V, ID = 2.0 A) g
NOTE — CAUTION
packaging MOS devices should be observed.
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
, VGS = 10 V, ID = 3.0 A) V
DS(on)
D
S
Watts
W/°C
(BR)DSS
DSS
GSS
GS(th)
DS(on)
fs
80 W, 28 V, 175 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 211–11, STYLE 2
(MRF173)
CASE 316–01, STYLE 2
(MRF173CQ)
θJC
65 — — V
— — 2.0 mA
— — 1.0 µA
1.0 3.0 6.0 V
— — 1.4 V
1.8 2.2 — mhos
0.8 °C/W
(continued)
REV 8
Motorola, Inc. 1997
MRF173 MRF173CQMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) C
Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) C
iss
oss
rss
— 110 — pF
— 105 — pF
— 10 — pF
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) NF — 1.5 — dB
Common Source Power Gain
(VDD = 28 V, P
Drain Efficiency (VDD = 28 V, P
Electrical Ruggedness
(VDD = 28 V, P
Load VSWR 30:1 at all phase angles
Series Equivalent Input Impedance MRF173
(VDD = 28 V, P
Series Equivalent Output Impedance MRF173
(VDD = 28 V, P
Series Equivalent Input Impedance MRF173CQ
(VDD = 28 V, P
Series Equivalent Output Impedance MRF173CQ
(VDD = 28 V, P
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
= 80 W, f = 150 MHz, IDQ = 50 mA) η 55 60 — %
out
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
= 80 W, f = 150 MHz, IDQ = 50 mA)
out
G
ps
ψ No Degradation in Output Power
Z
in
Z
out
Z
in
Z
out
11 13 — dB
— 2.99–j4.5 — Ohms
— 2.68–j1.3 — Ohms
— 1.35–j5.15 — Ohms
— 2.72–j149 — Ohms
RF
INPUT
C1
R1
R2
C8 C9 Z1 C10 C13 C14
–
RFC2
C16
R3
L1 L2
C2 C3
C1, C15 — 470 pF Unelco
C2, C3, C5 — 9–180 pF, Arco 463
C4, C6 — 15 pF, Unelco
C7 — 5–80 pF, Arco 462
C8, C10, C14, C16 — 0.1 µF
C9, C13 — 50 µF, 50 Vdc
C11, C12 — 680 pF, Feed Through
L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID
L2 — #16 AWG Hairpin 1″ long
D.U.T.
C11
L3 L4
L3 — #14 AWG Hairpin 0.8″ long
L4 — #14 AWG Hairpin 1.1″ long
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turns Bourns
R2 — 1.8 kΩ, 1/4 W
R3 — 10 kΩ, 1/2 W
Z1 — 1N5925A Motorola Zener
RFC1
C4 C5 C6 C7
C12
++
–
C15
Figure 1. 150 MHz Test Circuit
VDD = 28 V
V
dc
+
–
RF
OUTPUT
MRF173 MRF173CQ
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
120
f = 100 MHz
100
80
60
40
out
20
P , OUTPUT POWER (WATTS)
0
0234 7156
Pin, INPUT POWER (WATTS)
150 MHz
200 MHz
VDD = 28 V
IDQ = 50 mA
8910
Figure 2. Output Power versus Input Power
140
IDQ = 50 mA
120
100
80
60
40
out
P , OUTPUT POWER (WATTS)
20
f = 100 MHz
Pin = 4.0 W
3.0 W
2.0 W
1.0 W
80
70
60
50
40
30
20
10
out
P , OUTPUT POWER (WATTS)
0
0 2.0 4.0 6.0 128.0 10
Pin, INPUT POWER (WATTS)
f = 100 MHz
Figure 3. Output Power versus Input Power
140
IDQ = 50 mA
120
f = 150 MHz
100
80
60
40
out
P , OUTPUT POWER (WATTS)
20
150 MHz
200 MHz
VDD = 13.5 V
IDQ = 50 mA
14
Pin = 8.0 W
6.0 W
4.0 W
2.0 W
0
10 14 16 18 2412 20 22
VDD, SUPPLY VOLT AGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
140
IDQ = 50 mA
120
f = 200 MHz
100
80
60
40
out
P , OUTPUT POWER (WATTS)
20
0
10 14 16 18 2412 20 22
VDD, SUPPLY VOLT AGE (VOLTS)
Figure 6. Output Power versus Supply Voltage
26 28 30
Pin = 14 W
10 W
6.0 W
4.0 W
26 28 30
0
10 14 16 18 2412 20 22
VDD, SUPPLY VOLT AGE (VOLTS)
26 28 30
Figure 5. Output Power versus Supply Voltage
22
20
18
16
14
12
10
PS
G , POWER GAIN (dB)
8.0
6.0
4.0
2.0
20 40 60 80 100 120 140 160 200 220
f, FREQUENCY (MHz)
P
= 80 W
out
VDD = 28 V
IDQ = 50 mA
180
Figure 7. Power Gain versus Frequency
MRF173 MRF173CQMOTOROLA RF DEVICE DATA
3
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