Motorola MRF166W Datasheet
1
MRF166WMOTOROLA RF DEVICE DATA
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages to
500 MHz.
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
• Typical Performance at 175 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 17 dB
Efficiency = 60%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Low C
rss
— 4.5 pF @ VDS = 28 Volts
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Gate Voltage V
DSS
65 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) V
DGR
65 Vdc
Gate–Source Voltage V
GS
± 40 Adc
Drain Current — Continuous I
D
8.0 ADC
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
175
1.0
Watts
°C/W
Storage Temperature Range T
stg
–65 to +150 °C
Operating Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case R
θJC
1.0 °C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166W/D
SEMICONDUCTOR TECHNICAL DATA
40 W, 500 MHz
TMOS BROADBAND
RF POWER FET
CASE 412–01, Style 1
FLANGE
1
5
2
3
4
Motorola, Inc. 1994
REV 1
MRF166W
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 5.0 mA)
V
(BR)DSS
65 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
I
DSS
— — 1.0
mA
Gate–Source Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc)
I
GSS
— — 1.0
µA
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS= 10 Vdc, ID = 25 mA)
V
GS(th)
1.0 3.0 6.0
Vdc
Forward Transconductance
(VDS= 10 Vdc, ID = 1.5 A)
g
fs
600 800 —
mS
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
C
iss
— 30 —
pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
C
oss
— 35 —
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
C
rss
— 4.5 —
pF
FUNCTIONAL CHARACTERISTICS (2)
Common Source Power Gain
(VDD = 28 Vdc, P
out
= 40 W, f = 400 MHz, IDG = 100 mA)
G
ps
11 13 —
dB
Drain Efficiency
(VDD = 28 Vdc, P
out
= 40 W, f = 400 MHz, IDG = 100 mA)
η
45 50 —
%
Electrical Ruggedness
(VDD = 28 Vdc, P
out
= 40 W, f = 400 MHz, IDG = 100 mA)
Load VSWR = 30:1, All phase angles at frequency of test
Ψ
No Degradation in Output Power
(1) Each transistor chip measured separately.
(2) Both transistor chips operating in a push–pull amplifier.
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