Motorola MRF166C Datasheet
1
MRF166CMOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30–500
MHz.
• Low C
rss
— 4.5 pF @ VDS = 28 V
• MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%
• Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Gate Voltage V
DSS
65 Vdc
Drain–Gate Voltage
(RGS = 1.0 MΩ)
V
DGR
65 Vdc
Gate–Source Voltage V
GS
±40 Adc
Drain Current — Continuous I
D
4.0 Adc
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
P
D
70
0.4
Watts
W/°C
Storage Temperature Range T
stg
–65 to 150 °C
Operating Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.5 °C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF166C/D
SEMICONDUCTOR TECHNICAL DATA
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 319–07, STYLE 3
Motorola, Inc. 1995
D
G
S
REV 7
MRF166C
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 V, ID = 5.0 mA)
V
(BR)DSS
65 — — V
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0 V)
I
DSS
— — 1.0 mA
Gate–Source Leakage Current
(VGS = 40 V, VDS = 0 V)
I
GSS
— — 1.0 µA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 V, ID = 25 mA)
V
GS(th)
1.0 3.0 6.0 V
Forward Transconductance
(VDS = 10 V, ID = 1.5 A)
g
fs
600 800 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
C
iss
— 30 — pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
C
oss
— 35 — pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)
C
rss
— 4.5 — pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)
NF — 2.5 — dB
Common Source Power Gain
(VDD = 28 V, P
out
= 20 W, f = 400 MHz, IDQ = 100 mA)
G
ps
14 17 — dB
Drain Efficiency
(VDD = 28 V, P
out
= 20 W, f = 400 MHz, IDQ = 100 mA)
η 50 55 — %
Electrical Ruggedness
(VDD = 28 V, P
out
= 20 W, f = 400 MHz, IDQ = 100 mA,
Load VSWR 30:1 at All Phase Angles)
ψ No Degradation in Output Power
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