Motorola MRF166, MRF166C Datasheet

1

MRF166 MRF166CMOTOROLA RF DEVICE DATA

The RF MOSFET Line

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  

N–Channel Enhancement Mode MOSFETs

Designed primarily for wideband large–signal output and driver from 30–500

MHz.

• Low C

rss

— 4.5 pF @ VDS = 28 V

• MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%

• Optional 4–Lead Flange Package (MRF166)

• Replacement for Industry Standards such as MRF136, DV2820, BLF244,

SD1902, and ST1001

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Gate Voltage V

DSS

65 Vdc

Drain–Gate Voltage

(RGS = 1.0 MΩ)

V

DGR

65 Vdc

Gate–Source Voltage V

GS

±40 Adc

Drain Current — Continuous I

D

4.0 Adc

Total Device Dissipation @ TC = 25°C

Derate Above 25°C

P

D

70

0.4

Watts

W/°C

Storage Temperature Range T

stg

–65 to 150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

2.5 °C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF166/D

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SEMICONDUCTOR TECHNICAL DATA

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

20 W, 500 MHz

MOSFET

BROADBAND

RF POWER FETs

CASE 211–07, STYLE 2

CASE 319–07, STYLE 3

 Motorola, Inc. 1994

D

G

S

REV 6

MRF166 MRF166C
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

V

(BR)DSS

65 — — V

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

I

DSS

— — 1.0 mA

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0 V)

I

GSS

— — 1.0 µA

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

V

GS(th)

1.0 3.0 6.0 V

Forward Transconductance

(VDS = 10 V, ID = 1.5 A)

g

fs

600 800 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

iss

— 30 — pF

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

oss

— 35 — pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

C

rss

— 4.5 — pF

FUNCTIONAL CHARACTERISTICS

Noise Figure

(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)

NF — 2.5 — dB

MRF166C

Common Source Power Gain

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA)

G

ps

14 17 — dB

Drain Efficiency

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA)

η 50 55 — %

Electrical Ruggedness

(VDD = 28 V, P

out

= 20 W, f = 400 MHz, IDQ = 100 mA,

Load VSWR 30:1 at All Phase Angles)

ψ No Degradation in Output Power

MRF166

Common Source Power Gain

(VDD = 28 V, P

out

= 20 W, f = 150 MHz, IDQ = 25 mA)

G

ps

15 19 — dB

Drain Efficiency

(VDD = 28 V, P

out

= 20 W, f = 150 MHz, IDQ = 25 mA)

η 55 65 — %

Electrical Ruggedness

(VDD = 28 V, P

out

= 20 W, f = 150 MHz, IDQ = 25 mA,

Load VSWR 30:1 at All Phase Angles)

ψ No Degradation in Output Power

Series Equivalent Input Impedance

(VDD = 28 V, P

out

= 20 W, f = 150 MHz, IDQ = 25 mA)

Z

in

— 3.99 – j12.2 — Ohms

Series Equivalent Output Impedance

(VDD = 28 V, P

out

= 20 W, f = 150 MHz, IDQ = 25 mA)

Z

out

— 14.15 – j6.51 — Ohms

3

MRF166 MRF166CMOTOROLA RF DEVICE DATA

Figure 1. MRF166C 400 MHz Test Circuit

C1, C7 — 270 pF Chip Capacitor
C2, C6 — Johanson Trimmer Capacitor, 2–20 pF
C3 — 21 pF Mini Unelco
C4, C8, C9 — 0.01 µF
C5 — 18 pF Mini Unelco
C10, C11 — 680 pF Feed Through
C12, C13 — 50 µF, 50 V
D1 — 1N5925A Motorola Zener

Board Material — Teflon fiberglass
2 oz. Copper clad both sides, εr = 2.55

0.060″ Dielectric Thickness

L1 — #18 AWG, 2 Turns, 0.25″ ID 0.15″ Wide
L2 — #18 AWG Hairpin 0.7″ long, bend into hairpin
RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 220 Ω 1/2 Watt
R2 — 1.8 kΩ 1/4 Watt
R3 — 10 kΩ, 10 Turns Bourns
R4 — 10 k 1/4 Watt
Z1 — Microstrip Line 0.150″ wide, 0.420″ long
Z2 — Microstrip Line 0.150″ wide, 0.350″ long
Z3 — Microstrip Line 0.150″ wide, 0.350″ long
Z4 — Microstrip Line 0.150″ wide, 0.450″ long
Z5 — Microstrip Line 0.150″ wide, 1.1″ long
Z6 — Microstrip Line 0.150″ wide, 0.650″ long
Z7 — Microstrip Line 0.150″ wide, 0.200″ long

R3

C4 C13

D1

R2

RFC2

C8

C10

RFC1

C11

C12

+
–

+

–

Vdc

+
–

R4

C9

R1

RF INPUT

C1

Z1 Z2 L1 Z3 L2

Z4

C3

C2

D.U.T.

Z5 Z6 Z7

C7

C6C5

RF OUTPUT

R1

C7 C8

D1

R2

RFC2

C9

C10

RFC1

C11

C12

+
–

+

–

Vdc

+
–

R4

C6

R3

RF INPUT

C1

L1

C2

C5

C4C3

RF OUTPUT

C1, C2 — 406 ARCO
C3 — 39 pF ATC 100 Mil Chip Cap
C4 — 403 ARCO
C5 — 470 pF ATC 100 Mil Chip Cap
C6, C7, C9, C13 — 0.01 µF
C8, C12 — 50 µF, 50 V
C10, C11 — 680 pF Feed Through
D1 — 1N5925A Motorola Zener

L1 — #20 AWG 2 Turns, 0.235″ ID, 0.10″ OD
L2 — #18 AWG 2 Turns, 0.225″ ID, 0.22″ OD
L3 — #18 AWG 2 Turns, 0.325″ ID, 0.13″ OD

RFC1 — Ferroxcube VK200–19/4B
RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID
R1 — 10 kΩ, 10 Turn Bourns
R2 — 1.8 kΩ 1/4 Watt
R3 — 120 Ω 1/2 Watt
R4 — 10 kΩ 1/4 Watt
Board Material — 0.062″ G10, 2 oz Cu Clad Double Sided

Figure 2. MRF166 150 MHz Test Circuit

C13

L2 L3

VDD = 28 V

VDD = 28 V

D.U.T.