SEMICONDUCTOR TECHNICAL DATA
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF16030/D
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 2
MAXIMUM RATINGS
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2) R
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
CES
EBO
C
P
D
stg
θJC
–65 to +150 °C
60 Vdc
4.0 Vdc
4.0 Adc
103
0.58
1.7 °C/W
Watts
°C/W
REV 3
Motorola, Inc. 1997
MRF16030MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1.0 Adc, VCE = 5.0 Vdc)
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Input Return Loss
(VCC = 28 Vdc, P
Output Mismatch Stress
VCC = 28 Vdc, P
VSWR = 3:1, All phase angles at frequency of test
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600/1640 MHz)
out
= 30 Watts, f = 1600 MHz, Load
out
= 25°C unless otherwise noted)
C
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
h
FE
G
pe
η
I
RL
Ψ
55 — —
55 — —
4.0
— —
— — 10
20 35 80
7.5 7.7 —
40 45 —
8.0 — —
No Degradation in Output Power
Vdc
Vdc
Vdc
mAdc
—
dB
%
dB
MRF16030
2
MOTOROLA RF DEVICE DATA