Motorola MRF16006 Datasheet

1
MRF16006MOTOROLA RF DEVICE DATA
The RF Line
 
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector–Current I
C
1.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
26
0.15
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2) R
θJC
6.8 °C/W
(1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF16006/D

SEMICONDUCTOR TECHNICAL DATA
CASE 395C–01, STYLE 2
6.0 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
Motorola, Inc. 1995
REV 2
MRF16006 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 40 mAdc, VBE = 0)
V
(BR)CES
55
Vdc
Collector–Base Breakdown Voltage
(IC = 40 mAdc, IE = 0)
V
(BR)CBO
55
Vdc
Emitter–Base Breakdown Voltage
(IE = 2.5 mAdc, IC = 0)
V
(BR)EBO
4.0
Vdc
Collector Cutoff Current
(VCE = 28 Vdc, VBE = 0)
I
CES
2.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 0.2 Adc, VCE = 5.0 Vdc)
h
FE
20 80
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB= 28 Vdc, f = 1.0 MHz)
C
ob
11
pf
FUNCTIONAL TESTS
Common–Base Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 6 Watts, f = 1600/1640 MHz)
G
pe
7.4
dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 6 Watts, f = 1600/1640 MHz)
η
40 45
%
Return Loss
(VCC = 28 Vdc, P
out
= 6 Watts, f = 1600/1640 MHz)
I
RL
8.0
dB
Output Mismatch Stress
(VCC = 28 Vdc, P
out
= 6 Watts, f = 1600 MHz, Load
VSWR = 3:1 all phase angles at frequency of test)
ψ
No Degradation in Output Power
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