Motorola MRF160 Datasheet
1
MRF160MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband l arge–signal output and driver from
30–500 MHz.
• Typical Performance at 400 MHz, 28 Vdc
Output Power = 4.0 Watts
Gain = 17 dB
Efficiency = 50%
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 100% Tested for Load Mismatch at All Phase Angles with
30:1 VSWR
• Low C
rss
– 0.8 pF Typical at VDS = 28 Volts
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Gate Voltage V
DSS
65 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) V
DGR
65 Vdc
Gate–Source Voltage V
GS
± 40 Vdc
Drain Current–Continuous I
D
1.0 ADC
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
P
D
24
0.14
Watts
W/°C
Storage Temperature Range T
stg
– 65 to +150 °C
Operating Junction Temperature T
J
200 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case R
θJC
7.2 °C/W
NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF160/D
SEMICONDUCTOR TECHNICAL DATA
4.0 W, to 400 MHz
MOSFET BROADBAND
RF POWER FET
CASE 249–06, STYLE 3
D
S
G
Motorola, Inc. 1995
REV 2
MRF160
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VDS = 0 Vdc, VGS = 0 Vdc, ID = 5.0 mA)
V
(BR)DSS
65 — —
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 V)
I
DSS
— — 0.8
mA
Gate–Source Leakage Current
(VGS = 40 Vdc, VDS = 0 Vdc)
I
GSS
— — 1.0
µA
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mA)
V
GS(th)
1.0 3.0 6.0
Vdc
Drain Source On–Voltage
(VDS
(on)
, VGS = 10 Vdc, ID = 500 mA)
V
DS(on)
— 3.8 —
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mA)
g
fs
110 160 —
mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz)
C
iss
— 6.0 —
pF
Output Capacitance
(VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz)
C
oss
— 8.0 —
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
C
rss
— 0.8 —
pF
FUNCTIONAL CHARACTERISTICS
Common Source Power Gain
(VDD = 28 Vdc, P
out
= 4.0 W, f = 400 MHz, IDQ = 50 mA)
G
ps
15 17 —
dB
Drain Efficiency
(VDD = 28 Vdc, P
out
= 4.0 W, f = 400 MHz, IDQ = 50 mA)
η
45 50 —
%
Electrical Ruggedness
(VDD = 28 Vdc, P
out
= 4.0 W, f = 400 MHz, IDQ = 50 mA)
Load VSWR = 30:1 at All Phase Angles at Frequency of Test
ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 Vdc, P
out
= 4.0 W, f = 400 MHz, IDQ = 50 mA)
Z
in
— 5.23–j 27.2 —
Ohms
Series Equivalent Output Impedance
(VDD = 28 Vdc, P
out
= 4.0 W, f = 400 MHz, IDQ = 50 mA)
Z
out
— 14.7–j 31.2 —
Ohms
3
MRF160MOTOROLA RF DEVICE DATA
Figure 1. 400 MHz Test Circuit
C1, C5 220 pF, Chip Capacitor
C2 18 pF, ATC Chip Capacitor
C3 2.0–20 pF, Johanson Trimmer Capacitor
C4 2.0–10 pF, Johanson Trimmer Capacitor
C6, C7, C8 0.1 µF
C9, C10 680 pF, Feed Through
C11 50 µF, 50 V
L1 #20 AWG, 1 Turn 0.255″ ID
L2 #20 AWG, Hairpin 1.3″ long, bend into hairpin
L3 #20 AWG, Hairpin 1.1″ long, bend into hairpin
R1 160 Ω, 1/2 Watt
R2 10 kΩ, 1/2 Watt
R3 10 kΩ, 10 Turns Bourns
R4 1.8 kΩ, 1/4 Watt
RFC1 Ferroxcube VK200–19/4B
RFC2 10 Turns, #20 AWG, Enameled Close
Wound, 0.250″ ID
Z1 Microstrip Line 0.167″ wide, 0.820″ long
Z2 Microstrip Line 0.240″ wide, 0.240″ long
Z3 Microstrip Line 0.240″ wide, 0.240″ long
Z4 Microstrip Line 0.230″ wide, 0.590″ long
Z5 Microstrip Line 0.230″ wide, 0.580″ long
Z6 Microstrip Line 0.167″ wide, 0.620″ long
Z7 Microstrip Line 0.167″ wide, 0.800″ long
Board Material 0.060″ Glass Teflon 2 oz. Copper clad both sides
ε
r
= 2.55
+
–
+
–
L2
C3
C2
Z2Z1
C1
L1
Z3
Z4
D1
C7
C8
R4
R2
C6
R1
RFC1
C9
C10
C11
V
dc
VDD 28
V
RF OUTPUT
RF INPUT
C4
Z6
L3
Z7
C5
D.U.T.
RFC2
R3
L3
L2
0.240
″
0.95
″
0.55
″
0.65
″
Z5
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