Motorola MRF157 Datasheet

1

MRF157MOTOROLA RF DEVICE DATA

The RF Power MOS Line

   

N–Channel Enhancement Mode

Designed primarily for linear large–signal output stages to 80 MHz.

• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 21 dB (Typ)
Efficiency = 45% (Typ)

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

125 Vdc

Drain–Gate Voltage V

DGO

125 Vdc

Gate–Source Voltage V

GS

±40 Vdc

Drain Current — Continuous I

D

60 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

1350

7.7

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

0.13 °C/W

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF157/D



SEMICONDUCTOR TECHNICAL DATA



600 W, to 80 MHz

MOS LINEAR

RF POWER FET

CASE 368–03, STYLE 2

 Motorola, Inc. 1995

D

G

S

REV 1

MRF157
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V

(BR)DSS

125 — — Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I

DSS

— — 20 mAdc

Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

GSS

— — 5.0 µAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V

GS(th)

1.0 3.0 5.0 Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 40 A) V

DS(on)

1.0 3.0 5.0 Vdc

Forward Transconductance (VDS = 10 V, ID = 20 A) g

fs

16 24 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 50 V, VGS = 0 V, f = 1.0 MHz)

C

iss

— 1800 — pF

Output Capacitance

(VDS = 50 V, VGS = 0, f = 1.0 MHz)

C

oss

— 750 — pF

Reverse Transfer Capacitance

(VDS = 50 V, VGS = 0, f = 1.0 MHz)

C

rss

— 75 — pF

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

(VDD = 50 V, P

out

= 600 W, IDQ = 800 mA, f = 30 MHz)

G

ps

15 21 — dB

Drain Efficiency

(VDD = 50 V, P

out

= 600 W, f = 30 MHz, IDQ = 800 mA)

h 40 45 — %

Intermodulation Distortion

(VDD = 50 V, P

out

= 600 W(PEP), f1 = 30 MHz,

f2 = 30.001 MHz, IDQ = 800 mA)

IMD

(d3)

— –25 — dB

Figure 1. 30 MHz Test Circuit

C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2″ ID, 3/8″ Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801

R1, R2 — 10 Ohms/2W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola

T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001

All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.

0–6 V

R1

C5 C6

R2

C4

L1

C1 C2

C3

C7

RF

INPUT

+
–

D.U.T.

C9

C10 C11 C12 C13

C14

C15 C16 C17 C18

C19

C8

T1

L2 L3

C20 C21

50 V

+
–

RF

OUTPUT

+

3

MRF157MOTOROLA RF DEVICE DATA

40

30

20

10

0

0 2 4 6 8

TYPICAL DEVICE SHOWN
VDS = 10 V
V

GS(th)

= 3.5 V

gfs = 24 mhos

VGS, GATE–SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPS)

DS

100

10

1

2 20 200

TC = 25°C

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

I , DRAIN CURRENT (AMPS)

D

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

Figure 4. DC Safe Operating Area Figure 5. Capacitance versus Drain Voltage

Figure 6. Gate Voltage versus Drain Current Figure 7. Gate–Source Voltage versus

Case Temperature

30

25

20

15

10

5

0

1 2 105 20 10050

f, FREQUENCY (MHz)

VDD = 50 V
IDQ = 800 mA
P

out

= 600 W

POWER GAIN (dB)

800
600

400
200

0

800
600
400
200

0

0 40 80

VDS = 50 V

40 V

0 4 8 12 16

IDQ = 800 mA

Pin, INPUT POWER (WATTS)

P , OUTPUT POWER (WATTS)

out

80 MHz 30 MHz

VDS = 50 V

40 V

5000

2000

1000

500

200

100

50

1 2 5 10 20 50 100

C, CAPACITANCE (pF)

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

VGS = 0 V
f = 1 MHz

C

iss

C

oss

C

rss

1.04

1.03

1.02

1.01
1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

0.91

0.9
–25 0 25 50 75 100

ID = 20 A

16 A

8 A

4 A

1 A

0.4 A

TC, CASE TEMPERATURE (

°

C)

V , GATE–SOURCE VOLTAGE (NORMALIZED)

GS