Motorola MRF154 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode MOSFET

Designed primarily for linear large–signal output stages in the 2.0–100 MHz

frequency range.

• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)

D

Order this document

by MRF154/D



600 W, 50 V, 80 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G

CASE 368–03, STYLE 2

S

(HOG PAC)

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

125 Vdc
125 Vdc
±40 Vdc

60 Adc

1350

7.7

–65 to +150 °C

200 °C

Watts

W/°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.13 °C/W

REV 2

 Motorola, Inc. 1997

MRF154MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A) V
Forward Transconductance (VDS = 10 V, ID = 20 A) g

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

FUNCTIONAL TESTS

Common Source Amplifier Power Gain

(VDD = 50 V, P
Drain Efficiency

(VDD = 50 V, P
Intermodulation Distortion

(VDD = 50 V, P

f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)

= 600 W, IDQ = 800 mA, f = 30 MHz)

out

= 600 W, IDQ = 800 mA, f = 30 MHz)

out

= 600 W (PEP),

out

(BR)DSS

DSS
GSS

GS(th)

DS(on)

fs

iss

oss

rss

G

ps

η — 45 — %

IMD

(d3)

125 — — Vdc

— — 20 mAdc
— — 5.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc
16 20 — mhos

— 1600 — pF
— 950 — pF
— 175 — pF

— 17 — dB

— –25 — dB

+

0–6 V

–

RF

INPUT

C1 C2

C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47 µF, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1 µF
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039 µF
C21 — 10 µF/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2″ ID, 3/8″ Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801

R1

C5 C6

C4

L1

C3

C7

R2

DUT

L2 L3

C14

C15 C16 C17 C18 C19

C10 C11 C12

C9

R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola

T1 — Application Note AN749, Figure 4 for details.
T1 — Ferrite Material: 2 Each, Fair–Rite Products
T1 — Corp. #2667540001

C13

T1

C8

C20 C21

+

50 V

–

RF

OUTPUT

All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.

Figure 1. 30 MHz Test Circuit

MRF154
2

MOTOROLA RF DEVICE DATA

25

20

15

800
600

400
200

0

01020

VDD = 50 V

40 V

10

POWER GAIN (dB)

5

0

Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power

100

10

, DRAIN CURRENT (AMPS)

D

I

1

V

VDD = 50 V

IDQ = 800 mA

P

= 600 W

out

f, FREQUENCY (MHz)

, DRAIN–SOURCE VOLTAGE (VOL TS)

DS

TC = 25°C

P , OUTPUT POWER (WATTS)

2002 5 10 20 50 100

C, CAPACITANCE (pF)

200220

800
600

out

400
200

0

050

10,000

5000

2000

1000

500

200

100

12

(IDQ = 800 mA)

VDD = 50 V

40 V

P

, INPUT POWER (WATTS)

in

VGS = 0 V

f = 1 MHz

5 10 20 50 100

V

, DRAIN VOLTAGE (VOLTS)

DS

100 MHz 30 MHz

100

C

iss

C

oss

C

rss

Figure 4. DC Safe Operating Area Figure 5. Capacitance versus Drain V oltage

40

TYPICAL DEVICE SHOWN

30

VDS = 10 V
V

= 3.5 V

GS(th)

gfs = 24 mhos

20

10

, DRAIN CURRENT (AMPS)

DS

I

0

04

268

V

, GATE–SOURCE VOLTAGE (VOLTS)

GS

Figure 6. Gate V oltage versus Drain Current Figure 7. Common Source Unity Gain Frequency

600

500

400

300

200

100

t

f , UNITY GAIN FREQUENCY (MHz)

0

04060

20

ID, DRAIN CURRENT (AMPS)

VDS = 30 V

15 V

versus Drain Current

MRF154MOTOROLA RF DEVICE DATA

3