Motorola MRF151 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

   

N–Channel Enhancement–Mode MOSFET

Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.

• Guaranteed Performance at 30 MHz, 50 V:

Output Power — 150 W
Gain — 18 dB (22 dB Typ)
Efficiency — 40%

• Typical Performance at 175 MHz, 50 V:

Output Power — 150 W
Gain — 13 dB

• Low Thermal Resistance

• Ruggedness Tested at Rated Output Power

• Nitride Passivated Die for Enhanced Reliability

D

Order this document

by MRF151/D



150 W, 50 V, 175 MHz

N–CHANNEL

BROADBAND

RF POWER MOSFET

G

S

CASE 211–11, STYLE 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

DSS

DGO

GS

D

P

D

stg

J

125 Vdc
125 Vdc
±40 Vdc

16 Adc

300

1.71

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

θJC

0.6 °C/W

Watts

W/°C

REV 8

 Motorola, Inc. 1997

MRF151MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) I
Gate–Body Leakage Current (VGS = 20 V, VDS = 0) I

(BR)DSS

DSS
GSS

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) V
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A) V
Forward Transconductance (VDS = 10 V, ID = 5.0 A) g

GS(th)

DS(on)

fs

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) C

iss

oss

rss

FUNCTIONAL TESTS

Common Source Amplifier Power Gain, f = 30; 30.001 MHz

(VDD = 50 V, P
Drain Efficiency

(VDD = 50 V, P

ID (Max) = 3.75 A)
Intermodulation Distortion (1)

(VDD = 50 V, P

f2 = 30.001 MHz, IDQ = 250 mA)
Load Mismatch

(VDD = 50 V, P

IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

= 150 W (PEP), IDQ = 250 mA) f = 175 MHz

out

= 150 W (PEP), f = 30; 30.001 MHz,

out

= 150 W (PEP), f = 30 MHz,

out

= 150 W (PEP), f1 = 30; 30.001 MHz,

out

G

ps

η 40 45 — %

IMD

(d3)

IMD

(d11)

ψ

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

(VDD = 50 V, P

f2 = 30.001 MHz, IDQ = 3.0 A)

NOTE:

1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

= 50 W (PEP), f1 = 30 MHz,

out

IMD

G

PS

IMD

(d3)

(d9–13)

125 — — Vdc

— — 5.0 mAdc
— — 1.0 µAdc

1.0 3.0 5.0 Vdc

1.0 3.0 5.0 Vdc

5.0 7.0 — mhos

— 350 — pF
— 220 — pF
— 15 — pF

18
—

—
—

—
—
—

22
13

–32
–60

No Degradation in Output Power

23
–50
–75

—
—

–30

—

—
—
—

dB

dB

dB

+

BIAS

0–12 V

–

RF

INPUT

C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or

Monolythic with Short Leads

C3 — 200 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C4 — 15 pF Unencapsulated Mica or Dipped Mica

with Short Leads

C10 — 10 µF/100 V Electrolytic

T1

C1

R3

C5

C2

MRF151
2

C6 C7 C8

R1

D.U.T.

R2

Figure 1. 30 MHz Test Circuit

L1

T2

C3

L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 3.3 Ω/1.0 W Carbon (or 2.0 x 6.8 Ω/1/2 W in Parallel)
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,

L2

C4

er = 5

+

C9 C10

–

MOTOROLA RF DEVICE DATA

+

50 V

–

RF
OUTPUT

RFC2

+50 V

BIAS

0–12 V

RF INPUT

R1

C4 C5

C1

C2 C3

C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 60 WV Electrolytic
D1 — 1N5347 Zener Diode

+

L1

R3

R2

D.U.T.

C10

L4

L3

C6

L1 — 3/4″, #18 AWG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 1″, #16 AWG into Hairpin
L4 — 2 Turns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Choke
RFC2 — VK200–4B
R1 — 150 Ω, 1.0 W Carbon
R2 — 10 kΩ, 1/2 W Carbon
R3 — 120 Ω, 1/2 W Carbon
Board Material — 0.062″ Fiberglass (G10),
1 oz. Copper Clad, 2 Sides, εr = 5.0

+

L2

C11

C7

C9

RF OUTPUT

C8

Figure 2. 175 MHz T est Circuit

TYPICAL CHARACTERISTICS

1000

C

500

200

100

50

C, CAPACITANCE (pF)

20

0

0 1020304050

VDS, DRAIN–SOURCE VOLTAGE (VOL TS)

Figure 3. Capacitance versus

Drain–Source Voltage

iss

C

oss

C

rss

1.04

1.03

1.02

1.01
1

0.99

0.98

0.97

0.96

0.95

0.94

0.93

0.92

, DRAIN-SOURCE VOLTAGE (NORMALIZED)

0.91

GS

V

0.9
–25 0 25 50 75 100

TC, CASE TEMPERATURE (°C)

250 mA

1D = 5 A

4 A

2 A

1 A

100 mA

Figure 4. Gate–Source V oltage versus

Case T emperature

MRF151MOTOROLA RF DEVICE DATA

3