Motorola MRF15090 Datasheet
1
MRF15090MOTOROLA RF DEVICE DATA
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
• Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
• Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc,
IC = 5 Adc
• Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
• Characterized with Small–Signal S–Parameters from 1000–2000 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
25 Vdc
Collector–Emitter Voltage V
CES
60 Vdc
Emitter–Base Voltage V
EBO
4 Vdc
Collector–Current — Continuous @ T
J(max)
= 150°C I
C
15 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
250
1.43
Watts
W/°C
Storage Temperature Range T
stg
– 65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
0.70 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
V
(BR)CEO
25 28 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V
(BR)CES
60 65 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100 Ω)
V
(BR)CER
30 — — Vdc
(continued)
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MRF15090/D
SEMICONDUCTOR TECHNICAL DATA
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
Motorola, Inc. 1994
MRF15090
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
V
(BR)EBO
4 4.8 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
I
CES
— — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
h
FE
20 40 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
C
ob
— 52 — pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
out
= 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
G
pe
7.5 8.3 — dB
Collector Efficiency
(VCC = 26 Vdc, P
out
= 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
η 30 36 — %
Intermodulation Distortion
(VCC = 26 Vdc, P
out
= 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IMD — – 32 – 28 dBc
Input Return Loss
(VCC = 26 Vdc, P
out
= 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IRL 12 15 — dB
Load Mismatch
(VCC = 28 Vdc, P
out
= 90 W (PEP), ICQ = 250 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
3
MRF15090MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
G
pe
, POWER GAIN (dB)
G
pe
, POWER GAIN (dB)
P
out
G
pe
VCC = 26 Vdc
ICQ = 250 mA
Single Tone
5 W
10 W
Pin = 15 W
20
Figure 1. Output Power & Power Gain
versus Input Power
120
Pin, INPUT POWER (WATTS)
20
0
8
40
80
60
Figure 2. Output Power versus Frequency
100
0
1440
f, FREQUENCY (MHz)
1480
80
40
20
15204 12 16 1560
60
P
out
, OUTPUT POWER (WATTS)
1400 16000
P
out
, OUTPUT POWER (WATTS)
100
9.0
8.5
8.0
7.5
G
pe
, GAIN (dB)
1460 1500 1540 15801420
VCC = 26 Vdc
ICQ = 250 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
7th
η
G
pe
VSWR
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
ICQ = 100 mA
750 mA
500 mA
250 mA
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
100 mA
250 mA
500 mA
ICQ = 750 mA
120
Figure 3. Intermodulation Distortion
versus Output Power
– 20
P
out
, OUTPUT POWER (WATTS) PEP
– 50
– 60
40
– 40
– 30
Figure 4. Performance in Broadband Circuit
10
0
1440
f, FREQUENCY (MHz)
1480
8
4
2
152020 60 80 1540
6
IMD, INTERMODULATION DISTORTION (dBc)
Figure 5. Intermodulation Distortion
versus Output Power
– 20
0.1
P
out
, OUTPUT POWER (WATTS) PEP
– 50
– 60
10
– 40
– 30
Figure 6. Power Gain versus Output Power
2
P
out
, OUTPUT POWER (WATTS) PEP
6
1
10
10
1 100
100
1400 1560
0.1
0
3
4
5
7
8
9
100
9
7
3
1
5
1460 15001420
– 25
– 55
– 45
– 35
IMD, INTERMODULATION DISTORTION (dBc)
5th
3rd Order
50
20
0
40
30
10
1.0
2.0
2.5
3.0
INPUT VSWR
η
, COLLECTOR
EFFICIENCY (%)
VCC = 26 Vdc
ICQ = 250 mA
f = 1490 MHz Single Tone
P
out
= 90 W (PEP)
VCC = 26 Vdc
ICQ = 250 mA
1.5
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