Motorola MRF1507, MRF1507T1 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral MOSFETs

The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment.

• Specified Performance @ 520 MHz, 7.5 Volts

Output Power — 8 Watts Power Gain — 10 dB Efficiency — 65%

• Characterized with Series Equivalent Large–Signal

Impedance Parameters

• Excellent Thermal Stability

• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,

520 MHz, 2 dB Overdrive

• Broadband UHF/VHF Demonstration Amplifier

Information Available Upon Request

• RF Power Plastic Surface Mount Package

• Available in Tape and Reel by Adding T1 Suffix to

Part Number. T1 Suf fix = 1,000 Units per 12 mm, 7 Inch Reel.

G

D

S





8 W, 520 MHz, 7.5 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 466–02, STYLE 1

(PLD 1.5)

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage (1) V Gate–Source Voltage V Drain Current — Continuous I Total Device Dissipation @ TC = 25°C

Derate above 25°C Storage Temperature Range T Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

(1) Not designed for 12.5 volt applications.

NOTE – CAUTION packaging MOS devices should be observed.

– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

DSS

GS

D

P

D

stg

j

θJC

25 Vdc

±20 Vdc

4 Adc

62.5

0.50

–65 to +150 °C

150 °C

2 °C/W

Watts

W/°C

REV 1

 Motorola, Inc. 1998

MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Current

(VDS = 25 Vdc, VGS = 0) Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 100 µAdc) Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain

(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) Drain Efficiency

(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz) P

out

(VDD = 7.5 Vdc, Pin = 29 dBm, IDQ = 150 mA, f = 520 MHz)

= 25°C unless otherwise noted)

C

I

DSS

I

GSS

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 50 65 — %

P

out

— — 1 µAdc

2.5 3.4 — Vdc

0.3 0.44 — Vdc

1.30 1.80 — S

— 48 — pF

— 40.5 — pF

— 5.2 — pF

10 11 — dB

8 9.9 — W

MRF1507 MRF1507T1 2

MOTOROLA RF DEVICE DATA

B1

V

+

DD

C5C4

R1

R2

R3

C3

C6

L1

V

GG

C1

+

C2

RF

INPUT

N1

Z1 Z2 Z3 Z4

C8

C7

B1 Fair Rite Products Long Ferrite Bead C1, C5 0.1 µF, 100 mil Chip Capacitor C2, C4 10 µF, 50 V Electrolytic Capacitor C3, C6, C8, C14 130 pF, 100 mil Chip Capacitor C7, C9, C13 0.3–20 pF Trimmer Capacitor C10 82 pF, 100 mil Chip Capacitor C11 39 pF, 100 mil Chip Capacitor C12 32 pF, 100 mil Chip Capacitor L1 4 Turns, #20 AWG Enamel, 0.1″ID N1, N2 Type N Connectors R1 1.1 MΩ, 1/4 W Carbon R2 2 kΩ, 1/2 W Carbon R3 100 Ω, 1/4 W Carbon

C9

R4

C10

Z5 Z6

Figure 1. 500 – 520 MHz Broadband T est Circuit

C11

Z7

Z8

DUT

C12

R4 20 Ω, 1/4 W Carbon Z1 0.459″ x 0.083″ Microstrip Z2 0.135″ x 0.083″ Microstrip Z3 1.104″ x 0.083″ Microstrip Z4 0.1 14 ″ x 0.083″ Microstrip Z5 0.154″ x 0.083″ Microstrip Z6 0.259″ x 0.213″ Microstrip Z7 0.217″ x 0.213″ Microstrip Z8 0.175″ x 0.083″ Microstrip Z9 0.747″ x 0.083″ Microstrip Z10 0.608″ x 0.083″ Microstrip Z11 0.594″ x 0.083″ Microstrip Board Glass Teflon, 31 mils

Z9

Z10 Z11

C14

C13

N2

RF OUTPUT

11

10

, OUTPUT POWER (WATTS)

out

P

9 8 7 6 5 4 3 2

1

440 MHz

400 MHz

0.710.30 1.10 1.51

0.50 1.31 Pin, INPUT POWER (WATTS)

0.90

Figure 2. Output Power versus Input Power

TYPICAL CHARACTERISTICS

12 11

10

470 MHz

VDD = 7.5 V IDQ = 200 mA

9 8 7

, OUTPUT POWER (WATTS)

6

out

P

5 4

6100.10

IDQ = 200 mA

7

VDD, SUPPLY VOLT AGE (V)

8

Figure 3. Output Power versus

Supply V oltage @ 400 MHz

700 mW

500 mW

Pin = 300 mW

9

MRF1507 MRF1507T1MOTOROLA RF DEVICE DATA

3

TYPICAL CHARACTERISTICS

13 12

IDQ = 200 mA

11

10

9

8 7

, OUTPUT POWER (WATTS)

6

out

P

5 4

6

79

VDD, SUPPLY VOLT AGE (V)

8

Figure 4. Output Power versus

Supply V oltage @ 470 MHz

9

8.5

7.5

, OUTPUT POWER (WATTS)

out

P

6.5

8

7

6

0

f = 440 MHz

f = 400 MHz

50 100 150 250 500300 350 400

200

IDQ, GATE CURRENT (mA)

700 mW

500 mW

Pin = 300 mW

f = 470 MHz

VCC = 7.5 V Pin = 0.6 W

450

10

13 12

11 10

9 8 7

, OUTPUT POWER (WATTS)

6

out

P

5 4

20

16

12

(WATTS)

out

P

8

GAIN (dB),

4

0

IDQ = 200 mA

796

VDD, SUPPLY VOLT AGE (V)

8

Figure 5. Output Power versus

Supply V oltage @ 440 MHz

DRAIN EFFICIENCY

GAIN

P

out

5

674

VDD, DRAIN VOLTAGE (V)

700 mW

500 mW

Pin = 300 mW

10

80

70

60

50

f = 520 MHz IDQ = 150 mA Pin = 0.7 W

8910

DRAIN EFFICIENCY (%)

40

30

Figure 6. Output Power versus Gate Current

12

GAIN

10

, OUTPUT POWER (WATTS)

out

P (dB),

p

G

8

0

0.1 0.80.4 0.50.2 0.6 0.9 1.0

0.3

Figure 8. P

IDQ (A)

out

0.7

versus I

MRF1507 MRF1507T1 4

P

out

f = 520 MHz VDD = 7.5 V Pin = 0.7 W

DQ

15

10

out

P

5

GAIN (dB), (WATTS)

0

15

Figure 7. Gain, P

, Efficiency

out

versus Drain V oltage

GAIN

DRAIN EFFICIENCY

P

out

f = 520 MHz VDD = 7.5 V IDQ = 150 mA

17 19 21 2725 29

INPUT POWER (dBm)

Figure 9. P

, Gain, Drain Efficiency versus P

out

23

MOTOROLA RF DEVICE DATA

70

60

50

40

DRAIN EFFICIENCY (%)

30

20

in