Motorola MRF15060, MRF15060S Datasheet
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF15060/D
The RF Sub–Micron Bipolar Line
Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of
these devices makes them ideal for large–signal, common–emitter class A and
class AB amplifier applications in 26 volt amplitude modulated and multi–carrier
base station equipment.
• Guaranteed Two–Tone Performance at 1490 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10 dB
Efficiency — 33%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP)
Output Power
60 W, 1.49 GHz
RF POWER
BIPOLAR
TRANSISTORS
CASE 451–04, STYLE 1
(MRF15060)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current – Continuous I
Total Device Dissipation @ TC = 70°C
Derate above 70°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Thermal Resistance, Junction to Case R
CEO
CES
EBO
C
P
D
stg
J
θJC
CASE 451A–01, STYLE 1
(MF15060S)
25 Vdc
60 Vdc
60 Adc
8 Adc
185
1.43
– 65 to +150 °C
200 °C
0.7 °C/W
Watts
W/°C
Motorola, Inc. 1996
MRF15060 MRF15060SMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0 mAdc)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)
(1)
FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, P
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
3rd Order Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Input Return Loss
(VCC = 26 Vdc, P
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Output Mismatch Stress
(VCC = 26 Vdc, P
f1 = 1490.0 MHz, f2 = 1490.1 MHz,
VSWR = 3:1, at All Phase Angles)
(1) For information only. This part is collector matched.
= 60 Watts (PEP), ICQ = 200 mA,
out
= 60 Watts (PEP), ICQ = 200 mA,
out
= 60 Watts (PEP), ICQ = 200 mA,
out
= 60 Watts (PEP), ICQ = 200 mA,
out
= 60 Watts (PEP), ICQ = 200 mA,
out
Symbol Min Typ Max Unit
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CES
h
FE
C
ob
G
pe
η 33 38 — dB
IMD — –32 –28 dB
IRL 12 20 — dB
ψ
25 — — Vdc
60 — — Vdc
3 3.5 — Vdc
— — 10 mAdc
20 40 80 —
— 55 — pF
10 11.7 — dB
No Degradation in Output Power
MRF15060 MRF15060S
2
MOTOROLA RF DEVICE DATA
V
BASE
R1
D1
Q2
Q1
R2
C17 C18
B1
+
R3
C6
C11
C10 C12
C7
+
B2
R4
C8
C13 C15+C16
C9
C14
+
V
CC
L1
TL1
INPUT
C1
B1, B2 Short RF Bead Fair Rite–2743019447
C1, C2, C6, C8 18 pF, Chip Capacitor
C3 3.9 pF, Chip Capacitor
C4, C5 0.6–4.5 pF, Variable Capacitor
C7, C9 100 pF, Chip Capacitor
C10, C13 1000 pF, Chip Capacitor
C11, C14, C17 0.1 µF, 50 Vdc Ceramic Capacitor
C12, C15, C18 10 µF, 50 Vdc Electrolytic Capacitor
C16 250 µF, 50 Vdc Electrolytic Capacitor
TL2
C4
Figure 1. MRF15060 RF T est Fixture Schematic
C3
DUT
L2
TL3
C5
D1 Diode, 1N4003
L1, L2 3 Turns, 20 AWG, IDIA 0.102″ (17.7 nH)
Q1 Transistor, NPN BD135
Q2 Transistor, PNP BD136
R1 120 Ω, 1/4 W Resistor
R2 51 Ω, 1/4 W, Chip Resistor
R3, R4 4 x 39 Ω, 1/8 W Chip Resistors
TL1–TL4 Microstrip Line See Photomaster
Board 1/32″Glass Teflon, Arlon GX–0300–55–22,
εr = 2.55
TL4
OUTPUT
C2
MRF15060 MRF15060SMOTOROLA RF DEVICE DATA
3
Loading...