Motorola MRF15030 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
• Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP)
• Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc
• Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
• Characterized with Small Signal S–Parameters from 1000–2000 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF15030/D
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Emitter Breakdown Voltage
(I
= 50 mAdc, R
C
= 100 Ω)
BE
V
(BR)CEO
V
(BR)CES
V
(BR)CER
CEO
CES
EBO
C
P
D
stg
θJC
25 29 — Vdc
60 64 — Vdc
30 52 — Vdc
25 Vdc
60 Vdc
4 Vdc
10 Adc
125
0.71
–65 to +150 °C
1.40 °C/W
Watts
W/°C
(continued)
REV 7
Motorola, Inc. 1994
MRF15030MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
f1 = 1490 MHz, f2 = 1490.1 MHz)
Collector Efficiency
(VCC = 26 Vdc, P
f1 = 1490 MHz, f2 = 1490.1 MHz)
Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 1490 MHz, f2 = 1490.1 MHz)
Input Return Loss
(VCC = 26 Vdc, P
f1 = 1490 MHz, f2 = 1490.1 MHz)
Load Mismatch
(VCC = 28 Vdc, P
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
= 30 W (PEP), ICQ = 125 mA,
out
= 30 W (PEP), ICQ = 125 mA,
out
= 30 W (PEP), ICQ = 125 mA,
out
= 30 W (PEP), ICQ = 125 mA,
out
= 30 W (PEP), ICQ = 125 mA,
out
= 25°C unless otherwise noted.)
C
Symbol Min Typ Max Unit
V
(BR)EBO
I
CES
h
FE
C
ob
G
pe
η 30 34 — %
IMD — –34 –30 dBc
IRL 12 15 — dB
ψ
4 5 — Vdc
— — 10 mAdc
20 35 80 —
— 38 — pF
9.0 9.6 — dB
No Degradation in Output Power
TYPICAL CHARACTERISTICS
45
40
35
30
25
20
15
10
out
P , OUTPUT POWER (WATTS)
5
0
012 453
G
pe
VCC = 26 Vdc
ICQ = 125 mA
f = 1490 MHz Single Tone
Pin, INPUT POWER (WATTS)
P
out
Figure 1. Output Power & Power Gain versus Input Power
10.3
10.2
10.1
10.0
9.9
9.8
9.7
9.6
9.5
9.4
40
35
30
25
20
15
pe
G , GAIN (dB)
10
out
P , OUTPUT POWER (WATTS)
5
0
1420 1460 1540 15801500
1400 1440 1520 1560 16001480
Figure 2. Output Power versus Frequency
Pin = 3.5 W
2.5 W
1.5 W
VCC = 26 Vdc
ICQ = 125 mA
Single Tone
f, FREQUENCY (MHz)
MRF15030
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
–20
–30
–40
–50
IMD, INTERMODULATION DISTORTION (dBc)
–60
0 5 15 35 4025
10 20 30
P
, OUTPUT POWER (WATTS) PEP
out
Figure 3. Intermodulation Distortion
versus Output Power
–25
–30
ICQ = 75 mA
–35
–40
125 mA
–45
VCC = 26 Vdc
–50
IMD, INTERMODULATION DISTORTION (dBc)
–55
250 mA
400 mA
0.01 0.10 1.0 10
P
, OUTPUT POWER (WATTS) PEP P
out
f1 = 1490 MHz
f2 = 1490.1 MHz
3rd Order
5th
7th
VCC = 26 Vdc
ICQ = 125 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
100
12
11
10
G
pe
9
8
7
η
6
5
, POWER GAIN (dB)
4
pe
G
3
2
1
0
1450 1460 1470 14901480 1500 1510 15301520
VCC = 26 Vdc
P
= 30 W (PEP)
out
ICQ = 125 mA
VSWR
f, FREQUENCY (MHz)
Figure 4. Performance in Broadband Circuit
10
ICQ = 400 mA
9
250 mA
8
7
125 mA
6
pe
G , POWER GAIN (dB)
75 mA
5
4
0.01 0.10 1.0 10
, OUTPUT POWER (WATTS) PEP
out
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
100
60
50
40
, COLLECTOR
EFFICIENCY (%)
η
30
1.75
20
1.50
10
1.25
INPUT VSWR
0
1.00
Figure 5. Intermodulation Distortion
versus Output Power
11
10.5
10
Gain
9.5
9
pe
G , POWER GAIN (dB)
8.5
IMD
P
= 30 W (PEP)
out
ICQ = 125 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
8
18 20 22 24 26 28
VCE, COLLECTOR VOL TAGE (Vdc)
Figure 7. Power Gain and Intermodulation
Distortion versus Collector V oltage
–25
–30
–35
–40
Figure 6. Power Gain versus Output Power
60
50
40
Fundamental
30
20
10
0
Third Order
–10
out
P , OUTPUT POWER (dBm)
–20
–30
IMD, INTERMODULATION DISTORTION (dBc)
–40
10 15 20 3025 35 40 5045
VCC = 24 Vdc
IC = 2.5 A
f1 = 1490 MHz
f2 = 1490.1 MHz
Pin, INPUT POWER (dBm)
Figure 8. Class A Third Order Intercept Point
MRF15030MOTOROLA RF DEVICE DATA
3
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