Motorola MPSA27RLRA, MPSA27RLRM, MPSA27 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol MPSA25 MPSA27 Unit
Collector–Emitter Voltage V
CES
40 60 Vdc
Emitter–Base Voltage V
EBO
10 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
60 — — Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
I
CBO
— — 100 nAdc
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
I
CES
— — 500 nAdc
Emitter Cutoff Current
(VEB = 10 Vdc)
I
EBO
— — 100 nAdc
Order this document
by MPSA27/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR 3
BASE
2
EMITTER 1
MPSA27
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
(IC = 100 mA, VCE = 5.0 V)
h
FE
10,000
10,000
—
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = 100 mA, IB = 0.1 mAdc)
V
CE(sat)
— — 1.5 Vdc
Base–Emitter On Voltage
(IC = 100 mA, VCE = 5.0 Vdc)
V
BE(on)
— — 2.0 Vdc
SMALL–SIGNAL CHARACTERISTICS
Small Signal Current Gain
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
h
fe
1.25 2.4 — —
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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