Motorola MPS6717RLRA, MPS6717 Datasheet
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
T emperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
(1)
CEO
CBO
EBO
C
P
D
P
D
TJ, T
stg
R
q
JA
R
q
JC
= 25°C unless otherwise noted)
A
BASE
80 Vdc
80 Vdc
5.0 Vdc
500 mAdc
1.0
8.0
2.5
20
–55 to +150 °C
125 °C/W
50 °C/W
COLLECTOR
2
EMITTER
3
1
Watts
mW/°C
Watts
mW/°C
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Order this document
by MPS6717/D
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
80 — Vdc
80 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 10 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
1
MPS6717
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 250 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(IC = 250 mAdc, IB = 10 mAdc)
Base–Emitter On Voltage
(IC = 250 mAdc, VCE = 1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
400
TJ = 125°C
200
25°C
100
, DC CURRENT GAIN
80
FE
h
60
–55°C
h
FE
V
CE(sat)
V
BE(on)
C
h
cb
fe
80
50
— 0.5 Vdc
— 1.2 Vdc
— 30 pF
2.5 25 —
—
250
VCE = 1.0 V
—
40
0.5 0.7 1.0 2.0 3.0 5.0 7.0
1.0
0.8
IC = 10 mA
0.6
0.4
0.2
, COLLECTOR–EMITTER VOL TAGE (VOLTS)
CE
V
0
0.1 101.0
0.05 0.2 0.5 2.0 5.0 20
50
100 mA 250 mA
mA
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
10 20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
TJ = 25°C
500 mA
50
1.0
TJ = 25°C
0.8
V
@ IC/IB = 10
BE(sat)
0.6
0.4
V, VOLTAGE (VOLTS)
0.2
V
@ IC/IB = 10
0
0.5 1.0 20020
CE(sat)
5.0 10 50 100
2.0 500
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
V
BE(on)
300 500
@ VCE = 1.0 V
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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