MOTOROLA MPS6428RLRA Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
50 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
6.0 Vdc
Collector Current — Continuous I
C
200 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
T emperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200 °C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
50 — Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V
(BR)CBO
60 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc)
I
CES
— 0.025
m
A
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— 0.01
m
A
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
I
EBO
— 0.01
m
A
Order this document
by MPS6428/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS6428
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 Vdc, IC = 0.01 mAdc)
(VCE = 5.0 Vdc, IC = 0.1 mAdc)
(VCE = 5.0 Vdc, IC = 1.0 mAdc)
(VCE = 5.0 Vdc, IC = 10 mAdc)
h
FE
250
250
250
250
—
650
—
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
V
CE(sat)
—
—
0.2
0.6
Vdc
Base–Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
V
BE(on)
0.56 0.66 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 1.0 mAdc, VCE = 5.0 V, f = 100 MHz)
f
T
100 700 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
obo
— 3.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
C
ibo
— 8.0 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
h
ie
3.0 30 kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
h
re
2.0 20 X 10
–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
h
fe
200 800 —
Output Admittance
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
h
oe
5.0 50
m
mhos
NOISE FIGURE/TOTAL NOISE VOLTAGE CHARACTERISTICS
NF VT NF VT NF VT
Max (1) Max (2) Max (3) Unit
Noise Figure/Voltage
(VCE = 5.0 V , IC = 0.1 mA, TA = 25°C)
7.0 18.1 6.0 5700 3.5 4.3 dB nV
1. RS = 10 kΩ, BW = 1.0 Hz, f = 100 Hz
2. RS = 50 kΩ, BW = 15.7 kHz, f = 10 Hz–10 kHz
3. RS = 500 Ω, BW = 1.0 Hz, f = 10 Hz
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